A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Solid-State Electronics

Volumn 54, Issue 4, 2010, Pages 497-503

  Lee, Seungyeon ^a   Lee, Hyunjoo ^a   Kim, Sojeong ^a   Lee, Seungjun ^a   Shin, Hyungsoon ^a  

^a Ewha Womans University   (South Korea)

Author keywords

Macro model; Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Spin transfer torque

Indexed keywords

MACRO MODEL; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC RANDOM ACCESS MEMORY (MRAM); SPIN TRANSFER; SPIN-TRANSFER-TORQUE;

CIRCUIT SIMULATION; MAGNETIC MATERIALS; MAGNETIC STORAGE; MAGNETISM; SPIN DYNAMICS; TORQUE; WIND TUNNELS;

RANDOM ACCESS STORAGE;

EID: 77349110681     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.002     Document Type: Article

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