A thermal and process variation aware MTJ switching model and its applications in soft error analysis

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2012, Pages 720-727

  Wang, Peiyuan ^a   Zhang, Wei ^b   Joshi, Rajiv ^c   Kanj, Rouwaida ^d   Chen, Yiran ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d AMERICAN UNIVERSITY OF BEIRUT   (Lebanon)

Author keywords

MTJ; soft error; switching model; variation

Indexed keywords

COMPUTER AIDED DESIGN; ERRORS; MACROS; MAGNETIC STORAGE; MEMORY ARCHITECTURE; RADIATION HARDENING; RELIABILITY ANALYSIS; SWITCHING; VIRTUAL STORAGE;

DATA STORAGE DEVICES; DESIGN OPTIMIZATION; ENVIRONMENTAL DISTURBANCES; MAGNETIC TUNNELING JUNCTIONS; SOFT ERROR; SPIN-TRANSFER TORQUE RANDOM ACCESS MEMORY (STT-RAM); SWITCHING MODEL; VARIATION;

RANDOM ACCESS STORAGE;

EID: 84872351530     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/2429384.2429541     Document Type: Conference Paper

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