On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

Sensors and Actuators, B: Chemical

Volumn 209, Issue , 2015, Pages 658-663

  Chen, Chun Chia ^a   Chen, Huey Ing ^a   Liu, Hao Yeh ^a   Chou, Po Cheng ^a   Liou, Jian Kai ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

H2O2 surface treatment; Interference effect; ISFET; pH sensor

Indexed keywords

DECAY (ORGANIC); GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; HYDROGEN PEROXIDE; IONS; OXIDATION; PEROXIDES; PH SENSORS; SURFACE TREATMENT;

CURRENT SENSITIVITY; DRIFT RATES; HYDROGEN PEROXIDE SURFACE TREATMENTS; INTERFERENCE EFFECTS; LOW HYSTERESIS; LOWER VOLTAGES; VOLTAGE SENSITIVITY; XPS ANALYSIS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 84919797823     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2014.12.025     Document Type: Article

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