High-sensitivity ion-selective field-effect transistors using nanoporous silicon

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1056-1058

  Zehfroosh, Nina ^a   Shahmohammadi, Mehran ^a   Mohajerzadeh, Shams ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Ion selective field effect transistors (ISFETs); nanoporous; pH; sensitivity

Indexed keywords

CHANNEL AREA; EFFECTIVE AREA; GATE REGION; HIGH-SENSITIVITY; NANO-POROUS; NANO-POROUS FILMS; NANO-POROUS SILICON; SENSITIVITY;

IONS; PH EFFECTS; POLYSILICON;

FIELD EFFECT TRANSISTORS;

EID: 77956113875     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052344     Document Type: Article

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