Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

Sensors and Actuators, B: Chemical

Volumn 176, Issue , 2013, Pages 704-707

  Brazzini, T ^a   Bengoechea Encabo, A ^a   Sanchez Garcia M A ^a   Calle, F ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

2DEG; AlInN GaN; Chemical sensor; HEMT; Ion sensitive field effect transistor; PH sensor

Indexed keywords

CHEMICAL SENSORS; ELECTRODES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH SENSORS; TWO DIMENSIONAL ELECTRON GAS;

ALINN/GAN; CURRENT CHANGE; CURRENT RESPONSE; IN-PLANE LATTICES; INDIUM CONTENT; PH DETECTION; REFERENCE ELECTRODES; SI SUBSTRATES;

SURFACE POTENTIAL;

EID: 84875436410     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.09.109     Document Type: Article

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