Mechanical switching of ferroelectric polarization in ultrathin BaTiO3 films: The effects of epitaxial strain

Applied Physics Letters

Volumn 104, Issue 4, 2014, Pages

  Zheng, Wen ^a,b   Qiu, Xiangbiao ^a   Li, Chen ^a   Zheng, Chunyan ^b   Ge, Xiaohui ^b   Li, Aidong ^a   Wu, Di ^a  

^a NANJING UNIVERSITY   (China)

^b QINGDAO UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; POLARIZATION; SWITCHING; THIN FILMS; ULTRATHIN FILMS;

ELECTRICAL POLARIZATION; FERROELECTRIC POLARIZATION; FLEXOELECTRIC EFFECTS; IN-PLANE COMPRESSIVE STRAIN; NON-VOLATILE MEMORY APPLICATION; POLARIZATION REVERSALS; SPONTANEOUS POLARIZATIONS; ULTRATHIN FERROELECTRIC FILMS;

FERROELECTRIC FILMS;

EID: 84919636113     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4863855     Document Type: Article

References (25)

1. M. Dawber, K. M. Rabe, and J. F. Scott, Rev. Mod. Phys. 77, 1083 (2005). 10.1103/RevModPhys.77.1083
2. S. Mathews, R. Ramesh, T. Venkatesan, and J. Benedetto, Science 276, 238 (1997). 10.1126/science.276.5310.238
3. E. Y. Tsymbal, A. Gruverman, V. Garcia, M. Bibes, and A. Barthélémy, MRS Bull. 37, 138 (2012). 10.1557/mrs.2011.358
4. E. Y. Tsymbal and H. Kohlstedt, Science 313, 181 (2006). 10.1126/science.1126230
5. A. Gruverman, D. Wu, H. Lu, Y. Wang, H. W. Jang, C. M. Folkman, M. Ye. Zhuravlev, D. Felker, M. Rzchowski, C. B. Eom, and E. Y. Tsymbal, Nano Lett. 9, 3539 (2009). 10.1021/nl901754t
6. V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthélémy, and M. Bibes, Nature 460, 81 (2009). 10.1038/nature08128
7. A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, J. Allibe, B. Dlubak, J. Grollier, S. Xavier, C. Deranlot, A. Moshar, R. Proksch, N. D. Mathur, M. Bibes, and A. Barthélémy, Nat. Nanotech. 7, 101 (2011). 10.1038/nnano.2011.213
8. D. Pantel, S. Goetze, D. Hesse, and M. Alexe, Nature Mater. 11, 289 (2012). 10.1038/nmat3254
9. Z. Wen, C. Li, D. Wu, A. Li, and N. Ming, Nature Mater. 12, 617 (2013). 10.1038/nmat3649
10. L. Jiang, W. S. Choi, H. Jeen, S. Dong, Y. Kim, M. G. Han, Y. Zhu, S. V. Kalinin, E. Dagotto, T. Egami, and H. N. Lee, Nano Lett. 13, 5837 (2013). 10.1021/nl4025598
11. H. Lu, C. W. Bark, D. Esque de los Ojos, J. Alcala, C. B. Eom, G. Catalan, and A. Gruverman, Science 336, 59 (2012). 10.1126/science.1218693
12. H. Lu, D. J. Kim, C. W. Bark, S. Ryu, C. B. Eom, E. Y. Tsymbal, and A. Gruverman, Nano Lett. 12, 6289 (2012). 10.1021/nl303396n
13. G. Catalan, L. J. Sinnamon, and J. M. Gregg, J. Phys.: Condens. Matter 16, 2253 (2004). 10.1088/0953-8984/16/13/006
14. D. G. Schlom, L. Q. Chen, C. B. Eom, K. M. Rabe, S. K. Streiffer, and J. M. Triscone, Annu. Rev. Mater. Res. 37, 589 (2007). 10.1146/annurev.matsci.37.061206.113016
15. N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998). 10.1103/PhysRevLett.80.1988
16. Y. L. Li and L. Q. Chen, Appl. Phys. Lett. 88, 072905 (2006). 10.1063/1.2172744
17. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L. Q. Chen, D. G. Schlom, and C. B. Eom, Science 306, 1005 (2004). 10.1126/science.1103218
18. G. Koster, B. L. Kropman, G. J. H. Rijnders, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 73, 2920 (1998). 10.1063/1.122630
19. C. W. Bark, D. A. Felker, Y. Wang, Y. Zhang, H. W. Jang, C. M. Folkman, J. W. Park, S. H. Baek, H. Zhou, D. D. Fong, X. Q. Pan, E. Y. Tsymbal, M. S. Rzchowski, and C. B. Eom, Proc. Natl. Acad. Sci. U.S.A. 108, 4720 (2011). 10.1073/pnas.1014849108
20. S. Choudhury, Y. L. Li, L. Q. Chen, and Q. X. Jia, Appl. Phys. Lett. 92, 142907 (2008). 10.1063/1.2908210
21. M. J. Haun, E. Furman, S. J. Jang, H. A. McKinstry, and L. E. Cross, J. Appl. Phys. 62, 3331 (1987). 10.1063/1.339293
22. Y. Gaillard, A. Hurtado Macías, J. Muñoz-Saldaña, M. Anglada, and G. Trápaga, J. Phys. D: Appl. Phys. 42, 085502 (2009). 10.1088/0022-3727/42/8/085502
23. Y. Kim, S. J. Kelly, A. Morozovska, E. K. Rahani, E. Strelcov, E. Eliseev, S. Jesse, M. D. Biegalski, N. Balke, N. Benedek, D. Strukov, J. Aarts, I. Hwang, S. Oh, J. S. Choi, T. Choi, B. H. Park, V. B. Shenoy, P. Maksymovych, and S. V. Kalinin, Nano Lett. 13, 4068 (2013). 10.1021/nl401411r
24. P. Zubko and J. M. Triscone, Nature 460, 45 (2009). 10.1038/460045a
25. See supplementary material at http://dx.doi.org/10.1063/1.4863855 E-APPLAB-104-079405 for more details on structure characterizations for BTO ultrathin films grown on SRO-buffered DSO and STO substrates, surface morphologies for the BTO thin film before and after the mechanical writing, and tunneling current mappings for the tip/BTO/SRO ferroelectric tunnel junction on the DSO substrate with mechanical writing and electrical erasing of bistable resistance states.