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Journal of Materials Chemistry C

Volumn 3, Issue 1, 2015, Pages 132-137

Atomic layer deposition of ruthenium at 100 °c using the RuO4-precursor and H2

(5) Minjauw, Matthias M a Dendooven, Jolien a Capon, Boris a Schaekers, Marc b Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; RUTHENIUM ALLOYS; TEMPERATURE;

ALD GROWTH; ATOMIC CONCENTRATION; HALF REACTIONS; LOW TEMPERATURES; RU FILM; SAMPLE TEMPERATURE; STEADY STATE; TEMPERATURE WINDOW;

ATOMIC LAYER DEPOSITION;

EID: 84915822716 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc01961j Document Type: Article

Times cited : (36)

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