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Volumn 10, Issue 22, 2014, Pages 4718-4725

Effects of free carriers on piezoelectric nanogenerators and piezotronic devices made of gan nanowire arrays

(7) Wang, Chao Hung a Liao, Wei Shun a Ku, Nai Jen a Li, Yi Chang a Chen, Yen Chih a Tu, Li Wei b Liu, Chuan Pu a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOTECHNOLOGY; NANOWIRES; PIEZOELECTRICITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

DIODE CHARACTERISTICS; DOPING CONCENTRATION; FORCE SENSITIVITY; INNER RESISTANCE; PIEZOELECTRIC POTENTIAL; SCHOTTKY BARRIER HEIGHTS; SCREENING EFFECT; TURN-ON VOLTAGES;

CARRIER CONCENTRATION;

EID: 84915762957 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201400768 Document Type: Article

Times cited : (47)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.