Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

International Journal of Precision Engineering and Manufacturing

Volumn 15, Issue 2, 2014, Pages 339-343

  Seo, Hyunwoong ^a   Ichida, Daiki ^a   Uchida, Giichiro ^b   Kamataki, Kunihiro ^a   Itagaki, Naho ^a   Koga, Kazunori ^a   Shiratani, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Multi hollow plasma discharge CVD; Quantum dot sensitized solar cell; Si quantum dot; Si TiO2 film

Indexed keywords

ELECTRIC DISCHARGES; LIGHT ABSORPTION; NANOCRYSTALS; OXIDE MINERALS; PARTICLE SIZE; PARTICLE SIZE ANALYSIS; PLASMA CVD; SEMICONDUCTOR QUANTUM DOTS; SILICON; TITANIUM DIOXIDE;

PHOTON-TO-CURRENT EFFICIENCIES; PHOTOVOLTAIC PROPERTY; PLASMA DISCHARGE; QUANTUM DOT-SENSITIZED SOLAR CELLS; SENSITIZED SOLAR CELLS; SI QUANTUM DOT; TIO2 FILM; VISIBLE LIGHT ABSORPTION;

SILICON SOLAR CELLS;

EID: 84911498314     PISSN: 22347593     EISSN: 20054602     Source Type: Journal    
DOI: 10.1007/s12541-014-0343-8     Document Type: Article

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