The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell

Electrochimica Acta

Volumn 87, Issue , 2013, Pages 213-217

  Seo, Hyunwoong ^a   Wang, Yuting ^a   Uchida, Giichiro ^a   Kamataki, Kunihiro ^a   Itagaki, Naho ^a,b   Koga, Kazunori ^a   Shiratani, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Barrier layer; Quantum dot sensitized solar cell; Si quantum dot; Surface modification

Indexed keywords

BACK TRANSFER; BARRIER LAYERS; CHARGE RECOMBINATIONS; DISCHARGE PLASMA; ELECTRON RECOMBINATIONS; MULTIPLE EXCITON; PERFORMANCE ENHANCEMENTS; QUANTUM DOT-SENSITIZED SOLAR CELLS; REDOX ELECTROLYTES; SI QUANTUM DOT; SINGLE EXCITONS; TIO; ZINC ACETATE DIHYDRATE; ZINC NITRATES; ZNO;

CHEMICAL VAPOR DEPOSITION; ELECTROLYTES; OPEN CIRCUIT VOLTAGE; PLASMA CVD; SILICON; SOLAR CELLS; SURFACE TREATMENT; TITANIUM DIOXIDE; ZINC; ZINC COMPOUNDS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84870218910     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.09.087     Document Type: Article

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