Selective growth of SiGe quantum dots on hydrogen-passivated Si(100) surfaces

Thin Solid Films

Volumn 428, Issue 1-2, 2003, Pages 144-149

  Le Thanh, V ^a,c   Ngo, Tam T T ^b   Bui, Huy ^b   Bouchier, D ^a   Le, Tuyen T T ^b   Phan, Khoi H ^b  

^a CNRS   (France)

^b INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

^c CAMPUS DE LUMINY   (France)

Author keywords

Ammoniun fluoride; Facet structures; Quantum dots; Selective growth

Indexed keywords

ADSORPTION; DRY ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SURFACE PHENOMENA;

MOLECULAR ADSORPTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0344519613     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01244-0     Document Type: Conference Paper

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