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Volumn 11, Issue 3 SUPPL., 2011, Pages
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Low-voltage-operated top-gate polymer thin-film transistors with high-capacitance P(VDF-TrFE)/PVDF-blended dielectrics
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Author keywords
F8T2; Field effect transistor; High permittivity; Hysteresis; P(VDF TrFE); PVDF
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Indexed keywords
ACTIVE LAYER;
BLEND RATIOS;
BLENDED FILMS;
DIELECTRIC LAYER;
F8T2;
FIELD-EFFECT MOBILITIES;
GATE VOLTAGES;
HIGH PERMITTIVITY;
OPERATION VOLTAGE;
POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) [P(VDF-TRFE)];
PVDF;
REMNANT POLARIZATIONS;
TOP-GATE;
VINYLIDENE FLUORIDE;
CAPACITANCE;
CONJUGATED POLYMERS;
DIELECTRIC MATERIALS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
HYSTERESIS;
PERMITTIVITY;
POLYMERIC FILMS;
THIN FILM TRANSISTORS;
TRANSISTORS;
ORGANIC FIELD EFFECT TRANSISTORS;
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EID: 80255140363
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2011.01.011 Document Type: Conference Paper |
Times cited : (41)
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References (12)
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