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Volumn 108, Issue 10, 2010, Pages

Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics

(7) Jung, Soon Won a Baeg, Kang Jun a Yoon, Sung Min a You, In Kyu a Lee, Jong Keun a,c Kim, Young Soon c Noh, Yong Young b

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

b Hanbat National University (South Korea)

c Dongguk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BITHIOPHENES; BLENDED FILMS; DIELECTRIC LAYER; FERROELECTRIC POLYMERS; GATE DIELECTRIC LAYERS; GATE VOLTAGES; HIGH FIELD; HIGH PERMITTIVITY; LOW-VOLTAGE; OPERATING VOLTAGE; OPERATION VOLTAGE; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) [P(VDF-TRFE)]; POLYMER TRANSISTORS; SOLUTION PROCESS; TOP-GATE;

COMPOSITE FILMS; DIELECTRIC MATERIALS; ESTERS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); POLYMER FILMS; POLYMERIC FILMS; POLYMERS; THIN FILM TRANSISTORS;

CARRIER MOBILITY;

EID: 78650262430 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3511697 Document Type: Conference Paper

Times cited : (43)

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