Flexible NAND-like organic ferroelectric memory array

IEEE Electron Device Letters

Volumn 35, Issue 5, 2014, Pages 539-541

  Kam, Benjamin ^a,b   Ke, Tung Huei ^b   Chasin, Adrian ^a,b   Tyagi, Manav ^c   Cristoferi, Claudio ^d   Tempelaars, Karin ^e   Van Breemen, Albert J J M ^e   Myny, Kris ^b   Schols, Sarah ^b   Genoe, Jan ^a,b   Gelinck, Gerwin H ^e   Heremans, Paul ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c AMITY UNIVERSITY   (India)

^d POLITECNICO DI TORINO   (Italy)

^e HOLST CENTRE   (Netherlands)

Author keywords

Ferroelectric; memory array.; NAND; nonvolatile memory; organic semiconductors

Indexed keywords

FERROELECTRIC MATERIALS; FLASH MEMORY; SEMICONDUCTING ORGANIC COMPOUNDS;

ADDRESSING SCHEME; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC MEMORY ARRAYS; FLEXIBLE SUBSTRATE; MEMORY ARRAY; NAND; NON-VOLATILE MEMORY; PROOF OF PRINCIPLES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84899925906     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2313029     Document Type: Article

References (15)

1. G. Gelinck et al., "Organic transistors in optical displays and microelectronic applications," Adv. Mater., vol. 22, no. 34, pp. 3778-3798, Sep. 2010.
2. P. Heremans et al., "Polymer and organic nonvolatile memory devices," Chem. Mater., vol. 23, no. 3, pp. 341-358, Feb. 2011.
3. Y. J. Park et al., "Control of thin ferroelectric polymer films for non-volatile memory applications," IEEE Trans. Dielectr. Electr. Insul., vol. 17, no. 4, pp. 1135-1163, Aug. 2010.
4. T. Sekitani et al., "Printed nonvolatile memory for a sheet-type communication system," IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1027-1035, May 2009.
5. T. N. Ng et al., "Organic inkjet-patterned memory array based on ferroelectric field-effect transistors," Org. Electron., vol. 12, no. 12, pp. 2012-2018, Dec. 2011.
6. B. Kim, C. Byun, and S. Yoon, "Oxide-thin-film-transistor-based ferroelectric memory array," IEEE Electron Device Lett., vol. 32, no. 3, pp. 324-326, Mar. 2011.
7. A. van Breemen et al., "Ferroelectric transistor memory arrays on flexible foils," Org. Electron., vol. 14, no. 8, pp. 1966-1971, Aug. 2013.
8. Y. Kaneko et al., "A dual-channel ferroelectric-gate field-effect transistor enabling NAND-type memory characteristics," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1311-1318, May 2011.
9. A. J. J. M. van Breemen et al., "Photocrosslinking of ferroelectric polymers and its application in three-dimensional memory arrays," Appl. Phys. Lett., vol. 98, p. 183302, May 2011.
10. R. C. G. Naber et al., "An organic field-effect transistor with programmable polarity," Adv. Mater., vol. 17, no. 22, p. 2692, Nov. 2005.
11. R. C. G. Naber et al., "Origin of the drain current bistability in polymer ferroelectric field-effect transistors," Appl. Phys. Lett., vol. 90, no. 11, p. 113509, Mar. 2007.
12. R. Kalbitz et al., "Stability of polarization in organic ferroelectric metalinsulator-semiconductor structures," Appl. Phys. Lett., vol. 98, no. 3, p. 033303, Jan. 2011.
13. B. Kam et al., "Origin of multiple memory states in organic ferroelectric field-effect transistors," Appl. Phys. Lett., vol. 101, no. 3, p. 033304, Jul. 2012.
14. T. Furukawa, T. Nakajima, and Y. Takahashi, "Factors governing ferroelectric switching characteristics of thin VDF/TrFE copolymer films," IEEE Trans. Dielectr. Electr. Insul., vol. 13, no. 5, pp. 1120-1131, Oct. 2006. (Pubitemid 44711753)
15. H. Ishiwara, T. Shimamura, and E. Tokumitsu, "Proposal of a singletransistor-cell-type ferroelectric memory using an SoI structure and experimental study on the interference problem in the write operation," Jpn. J. Appl. Phys., vol. 36, no. 3B, pp. 1655-1658, Mar. 1997.