Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Japanese Journal of Applied Physics

Volumn 53, Issue 11, 2014, Pages

  Niigata, Kazutaka ^a   Narano, Kazuhiro ^a   Maeda, Yutaro ^a   Ao, Jin Ping ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHEMICAL STABILITY; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH; PH EFFECTS; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

ALGAN/GAN HETEROSTRUCTURES; GALLIUM NITRIDES (GAN); INCREASING TEMPERATURES; SENSING CHARACTERISTICS; SUPERIOR RESISTANCE; TEMPERATURE DEPENDENCE; THRESHOLD VOLTAGE SHIFTS; TRANSFER CHARACTERISTICS;

PH SENSORS;

EID: 84910594910     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.11RD01     Document Type: Conference Paper

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