Gateless AlGaN/GaN HEMT response to block co-polymers

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 851-854

  Kang, B S ^a   Louche, G ^b   Duran, R S ^b   Gnanou, Y ^b   Pearton, S J ^a   Ren, F ^a  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC RESISTANCE; ELECTRON MOBILITY; ENCAPSULATION; FERMI LEVEL; HIGH ELECTRON MOBILITY TRANSISTORS; NUCLEATION; PERMITTIVITY; PH EFFECTS; PLASMA ETCHING; POLARIZATION; SCHOTTKY BARRIER DIODES;

DIPOLE MOMENTS; SCHOTTKY BARRIERS; SURFACE POTENTIAL;

BLOCK COPOLYMERS;

EID: 1242276394     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.10.002     Document Type: Article

References (19)

1. Ambacher O., Eickhoff M., Steinhoff G., Hermann M., Gorgens L., Werss V., et al. Proc. ECS. 214:2002;27.
2. Neuberger R., Muller G., Ambacher O., Stutzmann M. Phys. Status Solidi A. 185:2001;85.
3. Schalwig J., Muller G., Ambacher O., Stutzmann M. Phys. Status Solidi A. 185:2001;39.
4. Steinhoff G., Hermann M., Schaff W.J., Eastmann L.F., Stutzmann M., Eickhoff M. Appl. Phys. Lett. 83:2003;177.
5. Eickhoff M., Neuberger R., Steinhoff G., Ambacher O., Muller G., Stutzmann M. Phys. Status Solidi B. 228:2001;519.
6. Schalwig J., Muller G., Eickhoff M., Ambacher O., Statzmann M. Sens. Actuators B. 81:2002;425.
7. Stutzmann M., Steinhoff G., Eickhoff M., Ambacher O., Nobel C.E., Schalwig J., et al. Diamond Relat. Mater. 11:2002;886.
8. Eickhoff M., Schalwig J., Steinhoff G., Neuberger R., Hermann M., Ambacher O., et al. Phys. Status Solidi C. 6:2003;1908.
9. Kim J., Gila B., Chung G.Y., Abernaty C.R., Pearton S.J., Ren F. Solid State Electron. 47:2003;1069.
10. Kim J., Ren F., Gila B., Abernaty C.R., Pearton S.J. Appl. Phys. Lett. 82:2003;739.
11. Kim J., Gila B., Abernaty C.R., Chung G.Y., Ren F., Pearton S.J. Solid State Electron. 47:2003;1487.
12. Mehandru R, Luo B, Kang BS, Kim J, Ren F, Pearton SJ, et al., Solid State Electron, in press.
13. Ambacher O., Eickhoff M., Link A., Hermann M., Stutzmann M., Tilak B.V., et al. Phys. Status Solidi C. 6:2003;1878.
14. Yales D.E., Levine S., Healy T.W. J. Chem. Faraday Trans. 70:1974;1807.
15. Siu W.M., Collold R.S.C. IEEE Trans. Electron Dev. ED-26:1979;1805.
16. Bousse L., DeRooij N.F., Bergbeld P. IEEE Trans. Electron Dev. ED-30:1983;1263.
17. Fung C.D., Cheng P.W., Ho W.H. IEEE Trans. Electron Dev. ED-33:1986;8.
18. Asbeck P.M., Yu E.T., Lau S.S., Sullivan G.J., Van Hove J., Redwing J.M. Electron. Lett. 33:1997;1230.
19. CRC handbook of chemistry and physics. 77th ed. New York: CRC press; 1997.