Simple REFET for pH detection in differential mode

Sensors and Actuators, B: Chemical

Volumn 60, Issue 1, 1999, Pages 43-48

  Errachid, A ^a   Bausells, J ^a   Jaffrezic Renault, N ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); ION SENSITIVE FIELD EFFECT TRANSISTORS; POLYMERIC MEMBRANES;

DIFFERENTIAL MODE MEASUREMENTS; REFERENCE FIELD EFFECT TRANSISTORS (REFET);

PH SENSORS;

EID: 0033361245     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00242-7     Document Type: Article

References (23)

1. Bergveld P. Development of an ion-sensitive solid-state device for neuro-physiological measurements. IEEE Trans. Biomed. Eng. BME 17:1970;70-71.
2. P. Bergveld, N.F. de Rooij, in: P.W. Cheung (Ed.), Theory, Design and Biomedical Applications of Solid State Chemical Sensors, CRC Press, Cleveland, USA, 1978, pp. 135-152.
3. Janata J., Huber R.J. Ion-sensitive field effect transistors. Ion-Sel. Electrode Rev. 1:1979;31-79.
4. Smith R.L., Scott D.C. An integrated sensor for electrochemical measurements. IEEE Trans. Biomed. Eng. BME 33:1986;83-90.
5. J. Janata, R.J. Huber, Solid State Chemical Sensors, Academic Press, Orlando, FL, USA, 1985, p. 66.
6. Bergveld P. The development and application of FET-based biosensors. Biosensors. 2:1986;15-33.
7. Bergveld P., van den Berg A., van der Wal P.D., Skowronska-Ptasinska M., Sudhölter E.J.R., Reinhoudt D.N. How electrical and chemical requirements for REFETs may coincide. Sens. Actuators. 18:1989;309-327.
8. Matsuo T., Nakajima H., Osa T., Anzai J. Parylene-gate ISFET and chemical modification of its surface with crown ether compounds. Sens. Actuators. 9:1986;115-123.
9. Comte P.A., Janata J. A field-effect transistor as a solid-state reference electrode. Anal. Chim. Acta. 101:1978;247-252.
10. Matsuo T., Nakajima H. Characteristics of reference electrodes using a polymer gate ISFET. Sens. Actuators. 5:1984;293-305.
11. 2-Si system: physical and theoretical aspects. IEEE Trans. Electron Devices. ED 26:1979;1805-1815.
12. Harame D.L., Bousse L.J., Shott J.D., Meindl J.D. Ion-sensing devices with silicon nitride and borosilicate glass insulators. IEEE Trans. Electron Devices. ED 34:1987;1700-1707.
13. Rocher V., Chovelon J.M., Jaffrezic-Renault N., Cros Y., Birot D. An oxynitride ISFET modified for working in a differential mode for pH detection. J. Electrochem. Soc. 141:1994;535-539.
14. van den Berg A., Bergveld P., Reinhoudt D.N., Sudhölter E.J.R. Sensitivity control of ISFETs by chemical surface modification. Sens. Actuators. 8:1985;129-148.
15. M.J. Madou, S.R. Morrison, Chemical Sensing With Solid State Devices, Academic Press, San Diego, CA, USA, 1989.
16. A. van den Berg, Ion sensors based on ISFET's with synthetic ionophores, PhD Thesis, Univ. of Twente, the Netherlands, 1988.
17. van den Berg A., van der Wal P.D., Skowronska-Ptasinska M., Sudhölter E.J.R., Reinhoudt D.N., Bergveld P. Nature of anionic sites in plasticized poly(vinyl chloride) membranes. Anal. Chem. 59:1987;2827-2829.
18. C. Cané, I. Gràcia, A. Merlos, M. Lozano, E. Lora-Tamayo, J. Esteve, Compatibility of ISFET and CMOS technologies for smart sensors, Proc. Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, USA, 1991, pp. 225-228.
19. Bergveld P. The operation of an ISFET as an electronic device. Sens. Actuators. 1:1981;17-29.
20. A. Vincze, G. Horvai, The design of reference electrodes without liquid junction, Proc. Electrochemical Society Meeting, Vol. 97-19, Paris, France, 1997, p. 550.
21. Hung L.Q. Electrochemical properties of the interface between two immiscible electrolyte solutions: Part I. Equilibrium situation and Galvani potential difference. J. Electroanal. Chem. 115:1980;159-174.
22. Abe H., Esashi M., Matsuo T. ISFET's using inorganic gate thin films. IEEE Trans. Electron Devices. ED 26:1979;1939-1944.
23. Sudhölter E.J.R., van der Wal P.D., Skowronska-Ptasinska M., van den Berg A., Bergveld P., Reinhoudt D.N. Modification of ISFETs by covalent anchoring of poly(hydroxyethyl methacrylate) hydrogel. Introduction of a thermodynamically defined semiconductor-sensing membrane interface. Anal. Chim. Acta. 230:1990;59-65.