An Epitaxial Ferroelectric Tunnel Junction on Silicon

Advanced Materials

Volumn 26, Issue 42, 2014, Pages 7185-7189

  Li, Zhipeng ^a,f   Guo, Xiao ^a   Lu, Hui Bin ^b   Zhang, Zaoli ^e   Song, Dongsheng ^f   Cheng, Shaobo ^f   Bosman, Michel ^c   Zhu, Jing ^f   Dong, Zhili ^d   Zhu, Weiguang ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF PHYSICS   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e ERICH SCHMID INSTITUTE OF MATERIALS SCIENCE   (Austria)

^f TSINGHUA UNIVERSITY   (China)

Author keywords

epitaxial growth; ferroelectric tunnel junction; non volatile memory; pulsed laser deposition; tunneling electroresistance

Indexed keywords

BARIUM COMPOUNDS; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; EPITAXIAL GROWTH; FERROELECTRICITY; NONVOLATILE STORAGE; PULSED LASER DEPOSITION; SILICON;

EPITAXIAL FERROELECTRIC; FERROELECTRIC TUNNEL JUNCTIONS; NON-VOLATILE MEMORY; ORDERS OF MAGNITUDE; POLARIZATION SWITCHING; SILICON PLATFORMS; TUNNELING ELECTRORESISTANCE; TUNNELING RESISTANCE;

TUNNEL JUNCTIONS;

BARIUM DERIVATIVE; BARIUM TITANATE(IV); CALCIUM DERIVATIVE; OXIDE; PEROVSKITE; SILICON; TITANIUM;

CHEMISTRY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPECTROSCOPY;

BARIUM COMPOUNDS; CALCIUM COMPOUNDS; MICROSCOPY, ELECTRON, SCANNING TRANSMISSION; OXIDES; SILICON; SPECTRUM ANALYSIS; TITANIUM;

EID: 84909951865     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201402527     Document Type: Article

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