Critical properties of nanoscale asymmetric ferroelectric tunnel junctions or capacitors

Acta Materialia

Volumn 60, Issue 4, 2012, Pages 1857-1870

  Zheng, Yue ^a,b   Chen, W J ^a   Luo, X ^a,c   Wang, B ^a   Woo, C H ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

Asymmetric; Critical thickness; Ferroelectric; Polarization; Tunnel junctions

Indexed keywords

ASYMMETRIC; ASYMMETRIC INTERFACE; CRITICAL PROPERTIES; CRITICAL THICKNESS; DEPOLARIZATION FIELDS; DIELECTRIC CONSTANTS; EXPLICIT EXPRESSIONS; FERROELECTRIC; FERROELECTRIC TUNNEL JUNCTIONS; FUNCTIONAL PROPERTIES; HIGH-SENSITIVITY; MISFIT STRAINS; NANO SCALE; SCREENING LENGTHS; SPONTANEOUS POLARIZATIONS; SURFACE ENERGIES; THERMODYNAMIC MODEL; THERMODYNAMIC POTENTIALS;

ELECTRODES; FERROELECTRICITY; INTERFACE STATES; NANOTECHNOLOGY; PHASE TRANSITIONS; POLARIZATION; SURFACE CHEMISTRY; TUNNEL JUNCTIONS;

ELECTROLYTIC CAPACITORS;

EID: 84862800221     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.12.048     Document Type: Article

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