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Volumn 105, Issue 18, 2014, Pages

Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

Author keywords

[No Author keywords available]

Indexed keywords

NANOSCALE ELECTRODES; RESISTIVE MEMORY;

EID: 84908587571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4901072     Document Type: Article
Times cited : (7)

References (16)
  • 2
    • 71049149271 scopus 로고    scopus 로고
    • Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications
    • Available at
    • H. S. Yoon, I. G. Baek, J. Zhao, H. Sim, M. Y. Park, H. Lee, G.-H. Oh, J. C. Shin, I.-S. Yeo, and U-I. Chung, "Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications," VLSI Technol. Symp. 2009, 26. Available at: http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5200621&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F5176122%2F5200578%2F05200621.pdf%3Farnumber%3D5200621
    • VLSI Technol. Symp. , vol.2009 , pp. 26
    • Yoon, H.S.1    Baek, I.G.2    Zhao, J.3    Sim, H.4    Park, M.Y.5    Lee, H.6    Oh, G.-H.7    Shin, J.C.8    Yeo, I.-S.9    Chung, U.-I.10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.