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Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

Thermal stability of SrTiO3/SiO2/Si interfaces at intermediate oxygen pressures

(7) Yong, G J a Kolagani, Rajeswari M a Adhikari, S a Vanderlinde, W b Liang, Y c Muramatsu, K d Friedrich, S e

a TOWSON UNIVERSITY (United States)

b LABORATORY FOR PHYSICAL SCIENCES (United States)

c MOTOROLA INC (United States)

d Hirox USA Inc (United States)

e LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALL SOLID STATE; BRAGG PEAKS; COMPLEX METAL OXIDES; GASEOUS SPECIES; HETEROEPITAXY; HIGH TEMPERATURE; OXYGEN PRESSURE; PULSE LASER DEPOSITION; REACTION SCHEMES; SEM; SI(0 0 1); SRTIO; THERMAL STABILITY; THERMO DYNAMIC ANALYSIS; THERMODYNAMIC CALCULATIONS;

DEGRADATION; EPITAXIAL GROWTH; LOW TEMPERATURE PRODUCTION; METALLIC COMPOUNDS; OPTICAL MICROSCOPY; OXYGEN; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICON; SOLID STATE REACTIONS; STRONTIUM ALLOYS; THERMOANALYSIS; THERMODYNAMIC STABILITY; THERMODYNAMICS; TITANIUM COMPOUNDS; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955876153 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3460098 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.