-
1
-
-
34548180960
-
Detailed balance limit of efficiency of p-n junction solar cells
-
W. Shockley, and H.J. Queisser Detailed balance limit of efficiency of p-n junction solar cells J. Appl. Phys. 32 1961 510 519
-
(1961)
J. Appl. Phys.
, vol.32
, pp. 510-519
-
-
Shockley, W.1
Queisser, H.J.2
-
2
-
-
0005835231
-
Detailed balance limit of the efficiency of tandem solar cells
-
A.D. Vos Detailed balance limit of the efficiency of tandem solar cells J. Phys. D: Appl. Phys 13 1980 839
-
(1980)
J. Phys. D: Appl. Phys
, vol.13
, pp. 839
-
-
Vos, A.D.1
-
3
-
-
84908511297
-
-
NREL, Best Research-Cell Efficiencies
-
NREL, Best Research-Cell Efficiencies, in, http://www.nrel.gov/ncpv/images/efficiency-chart.jpg, 2013.
-
(2013)
-
-
-
4
-
-
84884675131
-
Effects of internal luminescence and internal optics on the Voc and Jsc of III-V solar cells
-
IEEE, Tampa, FL
-
M.A. Steiner, J.F. Geisz, I. Garcia, D.J. Friedman, A. Duda, W.J. Olavarria, M. Young, S.R. Kurtz, Effects of internal luminescence and internal optics on the Voc and Jsc of III-V solar cells, in: 39th Photovoltaic Specialists Conference, IEEE, Tampa, FL, 2013, pp. 1437-1442.
-
(2013)
39th Photovoltaic Specialists Conference
, pp. 1437-1442
-
-
Steiner, M.A.1
Geisz, J.F.2
Garcia, I.3
Friedman, D.J.4
Duda, A.5
Olavarria, W.J.6
Young, M.7
Kurtz, S.R.8
-
6
-
-
15744367566
-
II-VI compounds as the top absorbers in tandem solar cell structures
-
P. Mahawela, G. Sivaraman, S. Jeedigunta, J. Gaduputi, M. Ramalingam, S. Subramanian, S. Vakkalanka, C.S. Ferekides, and D.L. Morel II-VI compounds as the top absorbers in tandem solar cell structures Mater. Sci. Eng. B 116 2005 8
-
(2005)
Mater. Sci. Eng. B
, vol.116
, pp. 8
-
-
Mahawela, P.1
Sivaraman, G.2
Jeedigunta, S.3
Gaduputi, J.4
Ramalingam, M.5
Subramanian, S.6
Vakkalanka, S.7
Ferekides, C.S.8
Morel, D.L.9
-
7
-
-
84908498295
-
Modeling of CdZnTe and CIGS and tandem solar cells
-
IEEE, Honolulu, HI
-
Y.G. Xiao, Z.Q. Li, M. Lestrade, Z.M.S. Li, Modeling of CdZnTe and CIGS and tandem solar cells, in: 35th Photovoltaic Specialists Conference, IEEE, Honolulu, HI, 2010, pp. 4.
-
(2010)
35th Photovoltaic Specialists Conference
, pp. 4
-
-
Xiao, Y.G.1
Li, Z.Q.2
Lestrade, M.3
Li, Z.M.S.4
-
8
-
-
84855863594
-
Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics
-
I. García, I. Rey-Stolle, and C. Algora Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics J. Phys. D: Appl. Phys. 45 2012 045101
-
(2012)
J. Phys. D: Appl. Phys.
, vol.45
, pp. 045101
-
-
García, I.1
Rey-Stolle, I.2
Algora, C.3
-
9
-
-
79551686889
-
Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells
-
C. Ebert, Z. Pulwin, D. Byrnes, A. Paranjpe, and W. Zhang Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells J. Cryst. Growth 315 2011 61 63
-
(2011)
J. Cryst. Growth
, vol.315
, pp. 61-63
-
-
Ebert, C.1
Pulwin, Z.2
Byrnes, D.3
Paranjpe, A.4
Zhang, W.5
-
13
-
-
0015284279
-
Diffusion of impurities in polycrystalline silicon
-
T.I. Kamins, J. Manoliu, and R.N. Tucker Diffusion of impurities in polycrystalline silicon J. Appl. Phys. 43 1972 83 91
-
(1972)
J. Appl. Phys.
, vol.43
, pp. 83-91
-
-
Kamins, T.I.1
Manoliu, J.2
Tucker, R.N.3
-
14
-
-
0001337925
-
Comparison of Be and C diffusion in heavily doped polycrystalline GaAs
-
K. Mochizuki, and T. Nakamura Comparison of Be and C diffusion in heavily doped polycrystalline GaAs Appl. Phys. Lett. 65 1994 2066 2068
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 2066-2068
-
-
Mochizuki, K.1
Nakamura, T.2
-
16
-
-
0028460921
-
Type II heterojunctions in the GaInAsSb/GaSb system
-
M.P. Mikhailova, and A.N. Titkov Type II heterojunctions in the GaInAsSb/GaSb system Semicond. Sci. Technol. 9 1994 1279
-
(1994)
Semicond. Sci. Technol.
, vol.9
, pp. 1279
-
-
Mikhailova, M.P.1
Titkov, A.N.2
-
19
-
-
67349122635
-
3 precursor layers for efficient CIGS thin-film solar cells
-
3 precursor layers for efficient CIGS thin-film solar cells Sol. Energy Mater. Sol. Cells 93 2009 1000 1003
-
(2009)
Sol. Energy Mater. Sol. Cells
, vol.93
, pp. 1000-1003
-
-
Mise, T.1
Nakada, T.2
-
20
-
-
27844510683
-
Stability of Transparent Conducting Oxide Films for Use at High Temperatures
-
Baltimore, Maryland (USA)
-
T. Minami, T. Miyata, T. Yamamoto, Stability of Transparent Conducting Oxide Films for Use at High Temperatures, in, AVS, Baltimore, Maryland (USA), 1999, pp. 1822-1826.
-
(1999)
AVS
, pp. 1822-1826
-
-
Minami, T.1
Miyata, T.2
Yamamoto, T.3
-
22
-
-
0034251174
-
New n-type transparent conducting oxides
-
T. Minami New n-type transparent conducting oxides MRS Bull. 25 2000 38 44
-
(2000)
MRS Bull.
, vol.25
, pp. 38-44
-
-
Minami, T.1
-
24
-
-
56249097234
-
Degradation of ZnO-based window layers for thin-film CIGS by accelerated stress exposures
-
San Diego, CA
-
F.J. Pern, R. Noufi, B. To, C. DeHart, X. Li, S.H. Glick, Degradation of ZnO-based window layers for thin-film CIGS by accelerated stress exposures, in: Reliability of Photovoltaic Cells, Modules, Components, and Systems, Proceedings of SPIE, San Diego, CA, 2008, pp. 70480P-70480P-70414.
-
(2008)
Reliability of Photovoltaic Cells, Modules, Components, and Systems, Proceedings of SPIE
, pp. 70480P-70414
-
-
Pern, F.J.1
Noufi, R.2
To, B.3
Dehart, C.4
Li, X.5
Glick, S.H.6
-
25
-
-
0002599604
-
Electromigration and related failure mechanisms in integrated circuit interconnects
-
R.E. Hummel Electromigration and related failure mechanisms in integrated circuit interconnects Int. Mater. Rev. 39 1994 97 112
-
(1994)
Int. Mater. Rev.
, vol.39
, pp. 97-112
-
-
Hummel, R.E.1
-
26
-
-
21844511608
-
Properties of transparent zinc-stannate conducting films prepared by radio frequency magnetron sputtering
-
T. Minami, S. Takata, H. Sato, and H. Sonohara Properties of transparent zinc-stannate conducting films prepared by radio frequency magnetron sputtering J. Vac. Sci. Technol., A 13 1995 1095 1099
-
(1995)
J. Vac. Sci. Technol., A
, vol.13
, pp. 1095-1099
-
-
Minami, T.1
Takata, S.2
Sato, H.3
Sonohara, H.4
-
27
-
-
0001508683
-
Highly transparent and conductive zinc-stannate thin films prepared by RF magnetron sputtering
-
T. Minami, H. Sonohara, S. Takata, and H. Sato Highly transparent and conductive zinc-stannate thin films prepared by RF magnetron sputtering Jpn. J. Appl. Phy. 33 1994 L1693
-
(1994)
Jpn. J. Appl. Phy.
, vol.33
, pp. 1693
-
-
Minami, T.1
Sonohara, H.2
Takata, S.3
Sato, H.4
-
29
-
-
79958829981
-
Surface passivation of semiconductors
-
E.H. Nicollian Surface passivation of semiconductors J. Vac. Sci. Technol., A 8 1971 S39 S49
-
(1971)
J. Vac. Sci. Technol., A
, vol.8
, pp. 39-S49
-
-
Nicollian, E.H.1
-
30
-
-
0023436375
-
Variable-range hopping and the hall coefficient in Si:As
-
D.W. Koon, and T.G. Castner Variable-range hopping and the hall coefficient in Si:As Solid State Commun. 64 1987 11 14
-
(1987)
Solid State Commun.
, vol.64
, pp. 11-14
-
-
Koon, D.W.1
Castner, T.G.2
-
33
-
-
85000243903
-
Density-functional theory study of stability and subgap states of crystalline and amorphous Zn-Sn-O
-
W. Körner, and C. Elsässer Density-functional theory study of stability and subgap states of crystalline and amorphous Zn-Sn-O Thin Solid Films 2013 6
-
(2013)
Thin Solid Films
, pp. 6
-
-
Körner, W.1
Elsässer, C.2
-
35
-
-
0032184505
-
Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering
-
T. Minami, T. Miyata, and T. Yamamoto Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering Surf. Coat. Technol. 108-109 1998 583 587
-
(1998)
Surf. Coat. Technol.
, vol.108-109
, pp. 583-587
-
-
Minami, T.1
Miyata, T.2
Yamamoto, T.3
-
37
-
-
0037446055
-
Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering
-
J.F. Pierson, A. Thobor-Keck, and A. Billard Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering Appl. Surf. Sci. 210 2003 359 367
-
(2003)
Appl. Surf. Sci.
, vol.210
, pp. 359-367
-
-
Pierson, J.F.1
Thobor-Keck, A.2
Billard, A.3
-
38
-
-
79959659085
-
Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering
-
(192115-192115-192113)
-
Y.S. Lee, M.T. Winkler, S.C. Siah, R. Brandt, and T. Buonassisi Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering Appl. Phys. Lett. 98 2011 (192115-192115-192113)
-
(2011)
Appl. Phys. Lett.
, vol.98
-
-
Lee, Y.S.1
Winkler, M.T.2
Siah, S.C.3
Brandt, R.4
Buonassisi, T.5
-
39
-
-
84864751062
-
Binary copper oxide semiconductors: From materials towards devices
-
B.K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P.J. Klar, T. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, and C. Ronning Binary copper oxide semiconductors: from materials towards devices Physica Status Solidi B 249 2012 1487 1509
-
(2012)
Physica Status Solidi B
, vol.249
, pp. 1487-1509
-
-
Meyer, B.K.1
Polity, A.2
Reppin, D.3
Becker, M.4
Hering, P.5
Klar, P.J.6
Sander, T.7
Reindl, C.8
Benz, J.9
Eickhoff, M.10
Heiliger, C.11
Heinemann, M.12
Bläsing, J.13
Krost, A.14
Shokovets, S.15
Müller, C.16
Ronning, C.17
-
40
-
-
0018991748
-
2O in the near infrared and the role of metallic inclusions
-
2O in the near infrared and the role of metallic inclusions Can. J. Phys. 58 1980 325 333
-
(1980)
Can. J. Phys.
, vol.58
, pp. 325-333
-
-
Weichman, F.L.1
Reyes, J.M.2
-
44
-
-
0001242106
-
Germanium-gallium arsenide heterojunctions
-
R.L. Anderson Germanium-gallium arsenide heterojunctions IBM J. Res. Dev. 4 1960 283 287
-
(1960)
IBM J. Res. Dev.
, vol.4
, pp. 283-287
-
-
Anderson, R.L.1
-
45
-
-
0038172513
-
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
-
C.G.V.d. Walle, and J. Neugebauer Universal alignment of hydrogen levels in semiconductors, insulators and solutions Nature 423 2003 3
-
(2003)
Nature
, vol.423
, pp. 3
-
-
Walle, C.G.V.D.1
Neugebauer, J.2
|