Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 61-63

  Ebert, C ^a   Pulwin, Z ^a   Byrnes, D ^a   Paranjpe, A ^a   Zhang, W ^a  

^a VEECO INSTRUMENTS INC   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B2. Semiconducting IIIV materials

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; DOPING LEVELS; DOPING PROFILES; GERMANIUM WAFER; GROWTH PAUSE; GROWTH PROCESS; MOCVD; MOCVD GROWTH; MOLE FRACTION; SEMI CONDUCTING III-V MATERIALS; TRIPLE JUNCTION SOLAR CELLS; V/III RATIO;

DOPING (ADDITIVES); EPITAXIAL FILMS; EPITAXIAL GROWTH; GERMANIUM; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR GROWTH; SOLAR CELLS; TELLURIUM;

TUNNEL JUNCTIONS;

EID: 79551686889     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.050     Document Type: Article

References (2)

1. I. Garcia, I. Rey-Stolle, B. Galiana, and C. Algora J. Cryst. Growth 298 2007 794
2. S. Lee, C. Fetzer, G. Stringfellow, D. Lee, and T. Seong J. Appl. Phys. 85 1999 3590