Microstructural properties of (In,Ga)2Se3 precursor layers for efficient CIGS thin-film solar cells

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 1000-1003

  Mise, Takahiro ^a   Nakada, Tokio ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

(In,Ga)2Se3 precursor; CIGS; Preferred orientation; Raman; RMS roughness

Indexed keywords

(IN,GA)2SE3 PRECURSOR; CIGS; PREFERRED ORIENTATION; RAMAN; RMS ROUGHNESS;

GALLIUM; INSTRUMENT SCALES; MOLYBDENUM;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 67349122635     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.11.028     Document Type: Article

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