Rapid thermal annealing effect on the characteristics of ZnSnO3 films prepared by RF magnetron sputtering

Current Applied Physics

Volumn 12, Issue SUPPL.4, 2012, Pages

  Choi, Yoon Young ^a   Kang, Seong Jun ^a   Kim, Han Ki ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Rapid thermal annealing (RTA); Resistivity; Transmittance; Ultraviolet photoelectron spectroscopy; Work function; Zinc tin oxide (ZTO)

Indexed keywords

AMORPHOUS STRUCTURES; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; THERMAL ANNEALING EFFECTS; TRANSMITTANCE; ZINC-TIN-OXIDE (ZTO);

AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; RAPID THERMAL ANNEALING; SURFACE PROPERTIES; TIN; TIN OXIDES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WORK FUNCTION; ZINC;

FILM PREPARATION;

EID: 84871919923     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.05.014     Document Type: Conference Paper

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