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Volumn 45, Issue 4, 2012, Pages
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Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAAS/GAAS;
BARRIER LAYERS;
CONCENTRATION PHOTOVOLTAICS;
DOPANT DIFFUSION;
DOPING LEVELS;
GAAS;
GE SUBSTRATES;
GROWTH CONDITIONS;
LATTICE-MATCHED;
LOW LOSS;
METAL-ORGANIC;
MULTI JUNCTION SOLAR CELLS;
PEAK CURRENT DENSITY;
PERFORMANCE ANALYSIS;
TRIPLE JUNCTION SOLAR CELLS;
ULTRA-HIGH;
VAPOUR-PHASE;
VOLTAGE DROP;
ALUMINUM GALLIUM ARSENIDE;
CURRENT DENSITY;
DROPS;
GERMANIUM;
TELLURIUM;
TUNNEL JUNCTIONS;
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EID: 84855863594
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/45/4/045101 Document Type: Article |
Times cited : (58)
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References (22)
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