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Volumn 13, Issue 10, 2014, Pages 932-937

Electric control of the spin Hall effect by intervalley transitions

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDE; HEAVY METALS; SEMICONDUCTING GALLIUM; STRENGTH OF MATERIALS;

EID: 84907991678     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4059     Document Type: Article
Times cited : (62)

References (50)
  • 1
    • 10344244030 scopus 로고    scopus 로고
    • Observation of the spin Hall e-ect in semiconductors
    • Kato, Y. K., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Observation of the spin Hall e-ect in semiconductors. Science 306, 1910-1913 (2004).
    • (2004) Science , vol.306 , pp. 1910-1913
    • Kato, Y.K.1    Myers, R.C.2    Gossard, A.C.3    Awschalom, D.D.4
  • 2
    • 18144420070 scopus 로고    scopus 로고
    • Experimental observation of the spin-Hall e-ect in a two dimensional spin-orbit coupled semiconductor system
    • Wunderlich, J., Kaestner, B., Sinova, J. & Jungwirth, T. Experimental observation of the spin-Hall e-ect in a two dimensional spin-orbit coupled semiconductor system. Phys. Rev. Lett. 94, 047204 (2005).
    • (2005) Phys. Rev. Lett. , vol.94 , pp. 047204
    • Wunderlich, J.1    Kaestner, B.2    Sinova, J.3    Jungwirth, T.4
  • 3
    • 28244436622 scopus 로고
    • Current-induced spin orientation of electrons in semiconductors
    • Dyakonov, M. I. & Perel, V. I. Current-induced spin orientation of electrons in semiconductors. Phys. Lett. A 35, 459-460 (1971).
    • (1971) Phys. Lett. A , vol.35 , pp. 459-460
    • Dyakonov, M.I.1    Perel, V.I.2
  • 4
    • 0009743023 scopus 로고
    • Possibility of orienting electron spins with current
    • Dyakonov, M. I. & Perel, V. I. Possibility of orienting electron spins with current. JETP Lett. 13, 467-470 (1971).
    • (1971) JETP Lett , vol.13 , pp. 467-470
    • Dyakonov, M.I.1    Perel, V.I.2
  • 5
    • 4243471288 scopus 로고    scopus 로고
    • Spin Hall e-ect
    • Hirsch, J. E. Spin Hall e-ect. Phys. Rev. Lett. 83, 1834-1837 (1999).
    • (1999) Phys. Rev. Lett. , vol.83 , pp. 1834-1837
    • Hirsch, J.E.1
  • 6
    • 2342575465 scopus 로고    scopus 로고
    • Universal intrinsic spin-Hall e-ect
    • Sinova, J. et al. Universal intrinsic spin-Hall e-ect. Phys. Rev. Lett. 92, 126603 (2004).
    • (2004) Phys. Rev. Lett. , vol.92 , pp. 126603
    • Sinova, J.1
  • 7
    • 0042972936 scopus 로고    scopus 로고
    • Dissipationless quantum spin current at room temperature
    • Murakami, S., Nagaosa, N. & Zhang, S-C. Dissipationless quantum spin current at room temperature. Science 301, 1348-1351 (2003).
    • (2003) Science , vol.301 , pp. 1348-1351
    • Murakami, S.1    Nagaosa, N.2    Zhang, S.-C.3
  • 9
    • 33746123419 scopus 로고    scopus 로고
    • Direct electronic measurement of the spin Hall e-ect
    • Valenzuela, S. O. & Tinkham, M. Direct electronic measurement of the spin Hall e-ect. Nature 442, 176-179 (2006).
    • (2006) Nature , vol.442 , pp. 176-179
    • Valenzuela, S.O.1    Tinkham, M.2
  • 10
    • 33646590278 scopus 로고    scopus 로고
    • Conversion of spin current into charge current at room temperature: Inverse spin-Hall e-ect
    • Saitoh, E., Ueda, M., Miyajima, H. & Tatara, G. Conversion of spin current into charge current at room temperature: Inverse spin-Hall e-ect. Appl. Phys. Lett. 88, 182509 (2006).
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 182509
    • Saitoh, E.1    Ueda, M.2    Miyajima, H.3    Tatara, G.4
  • 12
    • 80052072824 scopus 로고    scopus 로고
    • Electrically tunable spin injector free from the impedance mismatch problem
    • Ando, K. et al. Electrically tunable spin injector free from the impedance mismatch problem. Nature Mater. 10, 655-659 (2011).
    • (2011) Nature Mater , vol.10 , pp. 655-659
    • Ando, K.1
  • 13
    • 77954698267 scopus 로고    scopus 로고
    • Electron density dependence of the spin Hall e-ect in GaAs probed by scanning Kerr rotation microscopy
    • Matsuzaka, S., Ohno, Y. & Ohno, H. Electron density dependence of the spin Hall e-ect in GaAs probed by scanning Kerr rotation microscopy. Phys. Rev. B 80, 241305 (2009).
    • (2009) Phys. Rev. B , vol.80 , pp. 241305
    • Matsuzaka, S.1    Ohno, Y.2    Ohno, H.3
  • 16
    • 78650834076 scopus 로고    scopus 로고
    • Detection and quantification of inverse spin Hall e-ect from spin pumping in permalloy/normal metal bilayers
    • Mosendz, O. et al. Detection and quantification of inverse spin Hall e-ect from spin pumping in permalloy/normal metal bilayers. Phys. Rev. B 82, 214403 (2010).
    • (2010) Phys. Rev. B , vol.82 , pp. 214403
    • Mosendz, O.1
  • 17
    • 84860436207 scopus 로고    scopus 로고
    • Spin-torque switching with the giant spin Hall e-ect of tantalum
    • Liu, L. et al. Spin-torque switching with the giant spin Hall e-ect of tantalum. Science 336, 555-558 (2012).
    • (2012) Science , vol.336 , pp. 555-558
    • Liu, L.1
  • 18
    • 79952923456 scopus 로고    scopus 로고
    • Extrinsic spin Hall e-ect induced by iridium impurities in copper
    • Niimi, Y. et al. Extrinsic spin Hall e-ect induced by iridium impurities in copper. Phys. Rev. Lett. 106, 126601 (2011).
    • (2011) Phys. Rev. Lett. , vol.106 , pp. 126601
    • Niimi, Y.1
  • 19
    • 84867310945 scopus 로고    scopus 로고
    • Giant spin Hall e-ect induced by skew scattering from bismuth impurities inside thin film CuBi alloys
    • Niimi, Y. et al. Giant spin Hall e-ect induced by skew scattering from bismuth impurities inside thin film CuBi alloys. Phys. Rev. Lett. 109, 156602 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 156602
    • Niimi, Y.1
  • 20
    • 84866847976 scopus 로고    scopus 로고
    • Spin transfer torque devices utilizing the giant spin Hall e-ect of tungsten
    • Pai, C-F. et al. Spin transfer torque devices utilizing the giant spin Hall e-ect of tungsten. Appl. Phys. Lett. 101, 122404 (2012).
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 122404
    • Pai, C.-F.1
  • 21
    • 0003159849 scopus 로고
    • Microwave oscillations of current in III-V semiconductors
    • Gunn, J. B. Microwave oscillations of current in III-V semiconductors. Solid State Commun. 1, 88-91 (1963).
    • (1963) Solid State Commun. , vol.1 , pp. 88-91
    • Gunn, J.B.1
  • 22
    • 0002654577 scopus 로고
    • The Gunn e-ect
    • Butcher, P. N. The Gunn e-ect. Rep. Prog. Phys. 30, 97-148 (1967).
    • (1967) Rep. Prog. Phys. , vol.30 , pp. 97-148
    • Butcher, P.N.1
  • 24
    • 33947677654 scopus 로고    scopus 로고
    • Observation of the anomalous Hall e-ect in GaAs
    • Miah, M. I. Observation of the anomalous Hall e-ect in GaAs. J. Phys. D 40, 1659-1663 (2007).
    • (2007) J. Phys. D , vol.40 , pp. 1659-1663
    • Miah, M.I.1
  • 25
    • 70249111795 scopus 로고    scopus 로고
    • Spin-injection Hall e-ect in a planar photovoltaic cell
    • Wunderlich, J. et al. Spin-injection Hall e-ect in a planar photovoltaic cell. Nature Phys. 5, 675-681 (2009).
    • (2009) Nature Phys. , vol.5 , pp. 675-681
    • Wunderlich, J.1
  • 26
    • 78650637541 scopus 로고    scopus 로고
    • Spin Hall e-ect transistor
    • Wunderlich, J. et al. Spin Hall e-ect transistor. Science 330, 1801-1804 (2010).
    • (2010) Science , vol.330 , pp. 1801-1804
    • Wunderlich, J.1
  • 27
    • 79960580080 scopus 로고    scopus 로고
    • Spin current depolarization under high electric fields in undoped InGaAs
    • Okamoto, N. et al. Spin current depolarization under high electric fields in undoped InGaAs. Appl. Phys. Lett. 98, 242104 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 242104
    • Okamoto, N.1
  • 28
    • 0040772356 scopus 로고
    • Nonlinear electronic transport in semiconductor systems with two types of carriers: Application to GaAs
    • Lei, X. L., Xing, D. Y., Liu, M., Ting, C. S. & Birman, J. L. Nonlinear electronic transport in semiconductor systems with two types of carriers: Application to GaAs. Phys. Rev. B 36, 9136-9141 (1987).
    • (1987) Phys. Rev. B , vol.36 , pp. 9136-9141
    • Lei, X.L.1    Xing, D.Y.2    Liu, M.3    Ting, C.S.4    Birman, J.L.5
  • 29
    • 0039571829 scopus 로고
    • Theory of negative-conductance amplification and of Gunn instabilities in two-valley' semiconductors
    • McCumber, D. E. & Chynoweth, A. G. Theory of negative-conductance amplification and of Gunn instabilities in two-valley' semiconductors. IEEE Trans. Electron Devices 13, 4-21 (1966).
    • (1966) IEEE Trans. Electron Devices , vol.13 , pp. 4-21
    • McCumber, D.E.1    Chynoweth, A.G.2
  • 30
    • 36849137299 scopus 로고
    • Optical absorption edge in GaAs and its dependence on electric field
    • Moss, T. S. Optical absorption edge in GaAs and its dependence on electric field. J. Appl. Phys. 32, 2136-2139 (1961).
    • (1961) J. Appl. Phys. , vol.32 , pp. 2136-2139
    • Moss, T.S.1
  • 31
    • 67449105609 scopus 로고    scopus 로고
    • Temperature-dependent electron Lande g factor and the interband matrix element of GaAs
    • Hubner, J. et al. Temperature-dependent electron Lande g factor and the interband matrix element of GaAs. Phys. Rev. B 79, 193307 (2009).
    • (2009) Phys. Rev. B , vol.79 , pp. 193307
    • Hubner, J.1
  • 32
    • 54749144231 scopus 로고    scopus 로고
    • L-valley electron g-factor in bulk GaAs and AlAs
    • Shen, K., Weng, M. Q. &Wu, M.W. L-valley electron g-factor in bulk GaAs and AlAs. J. Appl. Phys. 104, 063719 (2008).
    • (2008) J. Appl. Phys. , vol.104 , pp. 063719
    • Shen, K.1    Weng, M.Q.2    Wu, M.W.3
  • 33
    • 4243098145 scopus 로고    scopus 로고
    • Resonant spin amplification in n-type GaAs
    • Kikkawa, J. M. & Awschalom, D. D. Resonant spin amplification in n-type GaAs. Phys. Rev. Lett. 80, 4313-4316 (1998).
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 4313-4316
    • Kikkawa, J.M.1    Awschalom, D.D.2
  • 34
    • 65549135019 scopus 로고    scopus 로고
    • Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
    • Jiang, J. H. &Wu, M.W. Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach. Phys. Rev. B 79, 125206 (2009).
    • (2009) Phys. Rev. B , vol.79 , pp. 125206
    • Jiang, J.H.1    Wu, M.W.2
  • 35
    • 84872228672 scopus 로고    scopus 로고
    • L-valley electron spin dynamics in GaAs
    • Zhang, T. T. et al. L-valley electron spin dynamics in GaAs. Phys. Rev. B 87, 041201(R) (2013).
    • (2013) Phys. Rev. B , vol.87 , pp. 041201
    • Zhang, T.T.1
  • 36
    • 84857693462 scopus 로고    scopus 로고
    • Multivalley spin relaxation in n-type bulk GaAs in the presence of high electric fields
    • Tong, H. &Wu, M.W. Multivalley spin relaxation in n-type bulk GaAs in the presence of high electric fields. Phys. Rev. B 85, 075203 (2012).
    • (2012) Phys. Rev. B , vol.85 , pp. 075203
    • Tong, H.1    Wu, M.W.2
  • 37
    • 28844496034 scopus 로고    scopus 로고
    • Theory of spin Hall conductivity in n-doped GaAs
    • Engel, H-A., Halperin, B. I. & Rashba, E. I. Theory of spin Hall conductivity in n-doped GaAs. Phys. Rev. Lett. 95, 166605 (2005).
    • (2005) Phys. Rev. Lett. , vol.95 , pp. 166605
    • Engel, H.-A.1    Halperin, B.I.2    Rashba, E.I.3
  • 39
    • 0001059737 scopus 로고    scopus 로고
    • ∗tight-binding calculation for cubic semiconductors: General method and material parameters
    • ∗tight-binding calculation for cubic semiconductors: General method and material parameters. Phys. Rev. B 57, 6493-6507 (1998).
    • (1998) Phys. Rev. B , vol.57 , pp. 6493-6507
    • Jancu, J.-M.1    Scholz, R.2    Beltram, F.3    Bassani, F.4
  • 40
    • 19544362191 scopus 로고    scopus 로고
    • Spin Hall and spin-diagonal conductivity in the presence of Rashba and Dresselhaus spin-orbit coupling
    • Sinitsyn, N. A., Hankiewicz, E. M., Teizer, W. & Sinova, J. Spin Hall and spin-diagonal conductivity in the presence of Rashba and Dresselhaus spin-orbit coupling. Phys. Rev. B 70, 081312(R) (2004).
    • (2004) Phys. Rev. B , vol.70 , pp. 081312
    • Sinitsyn, N.A.1    Hankiewicz, E.M.2    Teizer, W.3    Sinova, J.4
  • 42
    • 0035898421 scopus 로고    scopus 로고
    • Computational band-structure engineering of III-V semiconductor alloys
    • Geller, C. B. et al. Computational band-structure engineering of III-V semiconductor alloys. Appl. Phys. Lett. 79, 368-370 (2001).
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 368-370
    • Geller, C.B.1
  • 43
    • 84866120648 scopus 로고    scopus 로고
    • Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
    • Jain, A. et al. Crossover from spin accumulation into interface states to spin injection in the germanium conduction band. Phys. Rev. Lett. 109, 106603 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 106603
    • Jain, A.1
  • 44
    • 84883443760 scopus 로고    scopus 로고
    • Spin pumping and inverse spin Hall e-ect in germanium
    • Rojas-Sanchez, J-C. et al. Spin pumping and inverse spin Hall e-ect in germanium. Phys. Rev. B 88, 064403 (2013).
    • (2013) Phys. Rev. B , vol.88 , pp. 064403
    • Rojas-Sanchez, J.-C.1
  • 46
    • 84856727931 scopus 로고    scopus 로고
    • Observation of the inverse spin Hall e-ect in silicon
    • Ando, K., Saitoh, E. et al. Observation of the inverse spin Hall e-ect in silicon. Nature Commun. 3, 629 (2012).
    • (2012) Nature Commun. , vol.3 , pp. 629
    • Ando, K.1    Saitoh, E.2
  • 47
    • 0016424753 scopus 로고
    • Concentration dependence of the absorption coe-cient for n-and p-type GaAs between 1.3 and 1.6 eV
    • Casey, H. C., Sell, D. D. &Wecht, K.W. Concentration dependence of the absorption coe-cient for n-and p-type GaAs between 1.3 and 1.6 eV. J. Appl. Phys. 46, 250-257 (1975).
    • (1975) J. Appl. Phys. , vol.46 , pp. 250-257
    • Casey, H.C.1    Sell, D.D.2    Wecht, K.W.3
  • 48
    • 0016071759 scopus 로고
    • Concentration dependence of the refractive index for n-and p-type GaAs between 1.2 and 1.8 eV
    • Sell, D. D., Casey, H. C. &Wecht, K.W. Concentration dependence of the refractive index for n-and p-type GaAs between 1.2 and 1.8 eV. J. Appl. Phys. 45, 2650-2657 (1974).
    • (1974) J. Appl. Phys. , vol.45 , pp. 2650-2657
    • Sell, D.D.1    Casey, H.C.2    Wecht, K.W.3
  • 49
    • 0032089480 scopus 로고    scopus 로고
    • Carrier lifetime under low and high electric field conditions in semi-insulating GaAs
    • Rogalla, M. et al. Carrier lifetime under low and high electric field conditions in semi-insulating GaAs. Nucl. Instrum. Methods Phys. Res. A 410, 74-78 (1998).
    • (1998) Nucl. Instrum. Methods Phys. Res. A , vol.410 , pp. 74-78
    • Rogalla, M.1
  • 50
    • 4243798642 scopus 로고    scopus 로고
    • Optical orientation and femtosecond relaxation of spin-polarized holes in GaAs
    • Hilton, D. J. & Tang, C. L. Optical orientation and femtosecond relaxation of spin-polarized holes in GaAs. Phys. Rev. Lett. 89, 146601 (2002).
    • (2002) Phys. Rev. Lett. , vol.89 , pp. 146601
    • Hilton, D.J.1    Tang, C.L.2


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