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Volumn 79, Issue 19, 2009, Pages

Temperature-dependent electron Landé g factor and the interband matrix element of GaAs

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EID: 67449105609     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.193307     Document Type: Article
Times cited : (48)

References (35)
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    • Measurements at magnetic fields ranging from 0.3 to 7 T enter into the extrapolation.
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    • Recent higher order k□p models (Ref.) certainly give more accurate results for, e.g., the magnetic Luttinger parameter but they yield even with some improvements (Ref.) only a poor description of the electron Landé g factor (Ref.).
    • Recent higher order k□p models (Ref.) certainly give more accurate results for, e.g., the magnetic Luttinger parameter but they yield even with some improvements (Ref.) only a poor description of the electron Landé g factor (Ref.).
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    • The need to account for a redistribution effects resulting from Landau levels as pursued in Ref. is circumvented here by extrapolation to zero magnetic field.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.