Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Physical Review Letters

Volumn 109, Issue 10, 2012, Pages

  Jain, A ^a   Rojas Sanchez, J C ^a   Cubukcu, M ^a   Peiro, J ^b   Le Breton, J C ^b   Prestat, E ^a   Vergnaud, C ^a   Louahadj, L ^a   Portemont, C ^c   Ducruet, C ^c   Baltz, V ^d   Barski, A ^a   Bayle Guillemaud, P ^a   Vila, L ^a   Attane J P ^a   Augendre, E ^e   Desfonds, G ^a   Gambarelli, S ^a   Jaffres H ^b   George, J M ^b   Jamet, M ^a   more..

^a DIF   (France)

^b CNRS   (France)

^c CROCUS Technology   (France)

^d UMR 8191   (France)

^e CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL SPIN INJECTION; GATE VOLTAGES; LOW TEMPERATURES; MAGNETIC TUNNEL JUNCTION; ROOM TEMPERATURE; SPIN DIFFUSIONS; SPIN INJECTION; SPIN PHYSICS; SPIN SIGNAL; SPIN-ACCUMULATIONS; SPIN-PUMPING; SPINTRONIC DEVICE;

GERMANIUM; INTERFACE STATES; SEMICONDUCTOR JUNCTIONS; SIGNAL PROCESSING; SPIN HALL EFFECT;

CONDUCTION BANDS;

EID: 84866120648     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.106603     Document Type: Article

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