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Volumn 410, Issue 1, 1998, Pages 74-78

Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ARSENIC; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

EID: 0032089480     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00140-5     Document Type: Article
Times cited : (21)

References (11)
  • 8
    • 0031699381 scopus 로고    scopus 로고
    • Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs
    • M. Rogalla et al., Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs, Nucl. Instr. and Meth. B 134 (1998) 53.
    • (1998) Nucl. Instr. and Meth. B , vol.134 , pp. 53
    • Rogalla, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.