Atomic-scale characterization of oxide thin films gated by ionic liquid

ACS Applied Materials and Interfaces

Volumn 6, Issue 19, 2014, Pages 17018-17023

  Lang, Andrew C ^a   Sloppy, Jennifer D ^a   Ghassemi, Hessam ^a   Devlin, Robert C ^a   Sichel Tissot, Rebecca J ^a   Idrobo, Juan Carlos ^b   May, Steven J ^a   Taheri, Mitra L ^a  

^a Drexel University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

charge accumulation; electron energy loss spectroscopy; ionic liquid gating; La1 3Sr2 3FeO3; oxide thin film; transmission electron microscopy

Indexed keywords

CHEMICAL ANALYSIS; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON MICROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); IONIC LIQUIDS; IRON OXIDES; LIQUIDS; OXIDE FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY; CHARGE ACCUMULATION; COMPLEX OXIDE SYSTEMS; ELECTROCHEMICAL DEGRADATION; ELECTROCHEMICAL STABILITIES; HEXAFLUOROPHOSPHATES; OXIDE THIN FILMS; TRANSPORT PHENOMENA;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 84907904809     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am504547b     Document Type: Article

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