Relaxation dynamics of ionic liquid-VO 2 interfaces and influence in electric double-layer transistors

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Zhou, You ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTANCE; CHANNEL RESISTANCE; CONSTANT CURRENT CHARGING; CURRENT-VOLTAGE MEASUREMENTS; DOUBLE LAYERS; ELECTRIC DOUBLE LAYER; ELECTRONIC PHASE DIAGRAM; FIELD EFFECTS; FIELD-EFFECT; GATE BIAS POLARITY; GATE INSULATOR; IMPEDANCE SPECTROSCOPY; INTERFACE PROPERTY; MODEL SYSTEM; OXIDE INTERFACES; OXIDE SEMICONDUCTOR; RELAXATION DYNAMICS; SLOW RELAXATIONS; TIME-DEPENDENT;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; PHOTOELECTRONS; PHOTOLITHOGRAPHY; RELAXATION PROCESSES; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

IONIC LIQUIDS;

EID: 84860536552     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704689     Document Type: Article

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