Dense electron system from gate-controlled surface metal-insulator transition

Nano Letters

Volumn 12, Issue 12, 2012, Pages 6272-6277

  Liu, Kai ^a,b   Fu, Deyi ^a,c   Cao, Jinbo ^a,b   Suh, Joonki ^a   Wang, Kevin X ^a   Cheng, Chun ^a   Ogletree, D Frank ^b   Guo, Hua ^a,b   Sengupta, Shamashis ^d   Khan, Asif ^e   Yeung, Chun Wing ^e   Salahuddin, Sayeef ^e   Deshmukh, Mandar M ^d   Wu, Junqiao ^a,b  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c NANJING UNIVERSITY   (China)

^d TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

2D electron system; electrostatic gating; metal insulator transition; Vanadium dioxide

Indexed keywords

2D ELECTRON SYSTEM; CONDUCTANCE MODULATIONS; CORRELATED ELECTRONS; DENSE SURFACE; DOMINANT MECHANISM; DRIVING MECHANISM; ELECTROCHEMICAL REACTIONS; ELECTRON SYSTEMS; FREE ELECTRON; GATE VOLTAGES; HIGH DENSITY; IMPURITY DOPING; INSULATOR-TO-METAL TRANSITIONS; TECHNOLOGICAL INNOVATION; TWO-DIMENSIONAL ELECTRON SYSTEM; VACANCY DIFFUSION; VANADIUM DIOXIDE;

ELECTRIC FIELDS; ELECTRONS; NANOWIRES; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM;

SURFACES;

EID: 84870893303     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303379t     Document Type: Article

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