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Physical Review Letters

Volumn 113, Issue 15, 2014, Pages

MoS2: Choice substrate for accessing and tuning the electronic properties of graphene

(5) Lu, Chih Pin a,b Li, Guohong a Watanabe, K c Taniguchi, T c Andrei, Evay a

a RUTGERS UNIVERSITY (United States)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BORON NITRIDE; CARRIER CONCENTRATION; ELECTRON-ELECTRON INTERACTIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; GRAPHITE; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; TUNING;

ATOMICALLY SMOOTH SURFACE; DEVICE CONFIGURATIONS; ELECTRONIC PROPERTIES OF GRAPHENE; EXTERNAL PERTURBATIONS; HEXAGONAL BORON NITRIDE (H-BN); INTRINSIC ELECTRONICS; RESEARCH AND APPLICATION; STRUCTURE RECONSTRUCTION;

GRAPHENE;

EID: 84907835195 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.113.156804 Document Type: Article

Times cited : (86)

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