Probing the switching mechanism in ZnO nanoparticle memristors

Journal of Applied Physics

Volumn 116, Issue 11, 2014, Pages

  Li, Cheng ^a,b   Beirne, Gareth J ^a,c   Kamita, Gen ^a   Lakhwani, Girish ^a   Wang, Jianpu ^a,d   Greenham, Neil C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF BAYREUTH   (Germany)

^c LEIDEN UNIVERSITY   (Netherlands)

^d NANJING TECH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; MEMRISTORS; METAL NANOPARTICLES; MOLECULES; OXIDE MINERALS; PROBES; SWITCHING; ZINC OXIDE;

ADSORPTION AND DESORPTIONS; ELECTROABSORPTION SPECTROSCOPY; HIGH-RESISTANCE STATE; INJECTION BARRIERS; LOW BANDGAP POLYMERS; RESISTANCE SWITCHING; RESISTANCE SWITCHING MECHANISMS; SWITCHING MECHANISM;

ZNO NANOPARTICLES;

EID: 84907148694     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4894823     Document Type: Article

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