Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

Applied Physics Express

Volumn 7, Issue 9, 2014, Pages

  Okumura, Hironori ^a   Kita, Masao ^b   Sasaki, Kohei ^c   Kuramata, Akito ^c   Higashiwaki, Masataka ^d   Speck, James S ^a  

^a University of California   (United States)

^b TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TAMURA CORPORATION   (Japan)

^d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

GA-RICH CONDITIONS; HIGH GROWTH RATE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RMS ROUGHNESS; SMOOTH SURFACE;

GALLIUM COMPOUNDS;

EID: 84907027184     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.095501     Document Type: Article

References (19)

1. H. H. Tippins, Phys. Rev. 140, A316 (1965).
2. C. Janowitz, V. Scherer, M. Mohamed, A. Krapf, H. Dwelk, R. Manzke, Z. Galazka, R. Uecker, K. Lrmscher, R. Fornari, M. Michling, D. Schmeiber, J. R. Weber, J. B. Verley, and C. G. Van de Walle, New J. Phys. 13, 085014 (2011).
3. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett. 100, 013504 (2012).
4. Z. Galazka, Cryst. Res. Technol. 45, 1229 (2010).
5. E. G. Víllora, K. Shimamura, Y. Yoshikawa, K. Aoki, and N. Ichinose, J. Cryst. Growth 270, 420 (2004).
6. S. Ohira, M. Yoshioka, T. Sugawara, K. Nakajima, and T. Shishido, Thin Solid Films 496, 53 (2006).
7. H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, Jpn. J. Appl. Phys. 47, 8506 (2008).
8. M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett. 103, 123511 (2013).
9. S. Geller, J. Chem. Phys. 33, 676 (1960).
10. J. A˚hman, G. Svensson, and J. Albertsson, Acta Crystallogr., Sect. C 52, 1336 (1996).
11. V. M. Bermudez, Chem. Phys. 323, 193 (2006).
12. K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, J. Cryst. Growth 378, 591 (2013).
13. Y. Asaoka, J. Cryst. Growth 251, 40 (2003).
14. M. Y. Tsai, M. E. White, and J. S. Speck, J. Appl. Phys. 106, 024911 (2009).
15. M. Y. Tsai, O. Bierwagen, M. E. White, and J. S. Speck, J. Vac. Sci. Technol. A 28, 354 (2010).
16. J. M. LeBeau, R. E. Herbert, B. Jalan, J. Cagnon, P. Moetakef, S. Stemmer, and G. B. Stephenson, Appl. Phys. Lett. 95, 142905 (2009).
17. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005).
18. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000).
19. G. Koblmüller, R. Averbeck, H. Riechert, and P. Pongratz, Phys. Rev. B 69, 035325 (2004).