Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiation

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 40-45

  Asaoka, Y ^a  

^a KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Reflection high energy electron diffraction; A1. Surfaces; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting gallium arsenide

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DESORPTION; IRRADIATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ROOT MEAN SQUARE (RMS);

SURFACE PROPERTIES;

EID: 0037382419     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02492-2     Document Type: Conference Paper

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