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Japanese Journal of Applied Physics

Volumn 51, Issue 7 PART 1, 2012, Pages

Electrical conductive corundum-structured α-Ga 2O 3 Thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition

(2) Akaiwa, Kazuaki a Fujita, Shizuo a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DENSITY; C-PLANE SAPPHIRE SUBSTRATES; CHEMICAL VAPOR DEPOSITION METHODS; HIGH CRYSTALLINITY; N-TYPE CONDUCTIVITY; ROCKING CURVES;

CHEMICAL VAPOR DEPOSITION; GALLIUM; GALLIUM ALLOYS; SAPPHIRE; SEMICONDUCTOR DOPING; THIN FILMS; VAPORS; X RAY DIFFRACTION;

TIN;

EID: 84863788175 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.070203 Document Type: Article

Times cited : (124)

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