-
1
-
-
70449730669
-
Fundamentals of zinc oxide as a semiconductor
-
Janotti, A. & Van de Walle, C. G. Fundamentals of zinc oxide as a semiconductor. Rep. Prog. Phys. 72, 126501 (2009)
-
(2009)
Rep. Prog. Phys
, vol.72
, pp. 126501
-
-
Janotti, A.1
Van De Walle, C.G.2
-
2
-
-
25144462707
-
A comprehensive review of ZnO materials and devices
-
Ozgur,U. et al. A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 41301 (2005)
-
(2005)
J. Appl. Phys
, vol.98
, pp. 41301
-
-
Ozgur, U.1
-
3
-
-
0038172513
-
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
-
Van de Walle, C. G. & Neugebauer, J. Universal alignment of hydrogen levels in semiconductors, insulators and solutions. Nature 423, 626-628 (2003)
-
(2003)
Nature
, vol.423
, pp. 626-628
-
-
Van De Walle, C.G.1
Neugebauer, J.2
-
4
-
-
18244430368
-
Hydrogen as a Cause of Doping in Zinc Oxide
-
Van deWalle, C. G. Hydrogen as a Cause of Doping in Zinc Oxide. Phys. Rev. Lett. 85, 1012-1015 (2000)
-
(2000)
Phys. Rev. Lett
, vol.85
, pp. 1012-1015
-
-
Van Dewalle, C.G.1
-
5
-
-
33744461825
-
First-principles study of the diffusion of hydrogen in ZnO
-
Wardle, M. G.,Goss, J. P.&Briddon, P. R. First-principles study of the diffusion of hydrogen in ZnO. Phys. Rev. Lett. 96, 205504 (2006)
-
(2006)
Phys. Rev. Lett
, vol.96
, pp. 205504
-
-
Wardle, M.G.1
Goss, J.P.2
Briddon, P.R.3
-
6
-
-
29844458183
-
Hydrogen local modes and shallow donors in ZnO
-
Shi, G. A. et al.Hydrogen local modes and shallow donors in ZnO. Phys. Rev. B 72, 195211 (2005)
-
(2005)
Phys. Rev B
, vol.72
, pp. 195211
-
-
Shi, G.A.1
-
7
-
-
29744439909
-
Structure and stability of O-H donors in ZnO from high-pressure and infrared spectroscopy
-
Jokela, S. J. & McCluskey, M. D. Structure and stability of O-H donors in ZnO from high-pressure and infrared spectroscopy. Phys. Rev. B 72, 113201 (2005)
-
(2005)
Phys. Rev. B
, vol.72
, pp. 113201
-
-
Jokela, S.J.1
McCluskey, M.D.2
-
9
-
-
2342521249
-
Remote hydrogen plasma doping of single crystal ZnO
-
Strzhemechny, Y. M. et al. Remote hydrogen plasma doping of single crystal ZnO. Appl. Phys. Lett. 84, 2545 (2004)
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 2545
-
-
Strzhemechny, Y.M.1
-
11
-
-
34547669096
-
Lowered stimulated emission threshold of zinc oxide by hydrogen doping with pulsed argon-hydrogen plasma
-
Ohashi, N. et al. Lowered stimulated emission threshold of zinc oxide by hydrogen doping with pulsed argon-hydrogen plasma. J. Cryst. Growth. 306, 316-320 (2007)
-
(2007)
J. Cryst. Growth
, vol.306
, pp. 316-320
-
-
Ohashi, N.1
-
12
-
-
65249124595
-
Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy
-
Brauer, G. et al. Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy. Phys. Rev. B 79, 115212 (2009)
-
(2009)
Phys. Rev B
, vol.79
, pp. 115212
-
-
Brauer, G.1
-
13
-
-
28444491101
-
Production of native donors in ZnO by annealing at high temperature in Zn vapor
-
Halliburton, L. E. et al. Production of native donors in ZnO by annealing at high temperature in Zn vapor. Appl. Phys. Lett. 87, 172108 (2005)
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 172108
-
-
Halliburton, L.E.1
-
14
-
-
0021428475
-
Highly conductive and transparent aluminum doped zinc oxide thin films prepared by RF magnetron sputtering
-
Minami, T., Nanto, H. & Takata, S. Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering. Jpn. J. Appl. Phys. 23, L280 (1984)
-
(1984)
Jpn. J. Appl. Phys
, vol.23
-
-
Minami, T.1
Nanto, H.2
Takata, S.3
-
15
-
-
84884339577
-
Electron doping limit in Al-doped ZnO by donor-acceptor interactions
-
Noh, J.-Y., Kim, H., Kim, Y.-S. & Park, C. H. Electron doping limit in Al-doped ZnO by donor-acceptor interactions. J. Appl. Phys. 113, 153703 (2013)
-
(2013)
J. Appl. Phys.
, vol.113
, pp. 153703
-
-
Noh, J.-Y.1
Kim, H.2
Kim, Y.-S.3
Park, C.H.4
-
16
-
-
84873036696
-
Compensation in al-doped ZnO by Al-Related acceptor complexes: Synchrotron X-Ray absorption spectroscopy and theory
-
T-Thienprasert, J. et al. Compensation in Al-Doped ZnO by Al-Related Acceptor Complexes: Synchrotron X-Ray Absorption Spectroscopy and Theory. Phys. Rev. Lett. 110, 055502 (2013)
-
(2013)
Phys. Rev. Lett
, vol.110
, pp. 055502
-
-
T-Thienprasert, J.1
-
17
-
-
36049043479
-
Characterization of donor states in ZnO
-
Seghier, D. & Gislason, H. P. Characterization of donor states in ZnO. Physica B 401-402, 404-407 (2007)
-
(2007)
Physica B
, vol.401-402
, pp. 404-407
-
-
Seghier, D.1
Gislason, H.P.2
-
18
-
-
0037415828
-
ZnO-based transparent thin-film transistors
-
Hoffman, R. L., Norris, B. J. & Wager, J. F. ZnO-based transparent thin-film transistors. Appl. Phys. Lett. 82, 733-735 (2003)
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 733-735
-
-
Hoffman, R.L.1
Norris, B.J.2
Wager, J.F.3
-
19
-
-
4243373450
-
Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa12xAs alloys
-
Chadi, D. J. & Chang, K. J. Theory of the Atomic and Electronic Structure of DX Centers in GaAs and AlxGa12xAs Alloys. Phys. Rev. Lett. 61, 873-876 (1988)
-
(1988)
Phys. Rev. Lett
, vol.61
, pp. 873-876
-
-
Chadi, D.J.1
Chang, K.J.2
-
20
-
-
33749233582
-
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
-
Lany, S. & Zunger, A. Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors. Phys. Rev. B 72, 035215 (2005)
-
(2005)
Phys. Rev B
, vol.72
, pp. 035215
-
-
Lany, S.1
Zunger, A.2
-
22
-
-
79952721366
-
Anionic and hidden hydrogen in ZnO
-
Du, M.-H. & Biswas, K. Anionic and Hidden Hydrogen in ZnO. Phys. Rev. Lett. 106, 115502 (2011)
-
(2011)
Phys. Rev. Lett
, vol.106
, pp. 115502
-
-
Du, M.-H.1
Biswas, K.2
-
23
-
-
18144398938
-
Hydrogen-mediated spin-spin interaction in ZnCoO
-
Park, C. H. & Chadi, D. J. Hydrogen-Mediated Spin-Spin Interaction in ZnCoO. Phys. Rev. Lett. 94, 127204 (2005)
-
(2005)
Phys. Rev. Lett
, vol.94
, pp. 127204
-
-
Park, C.H.1
Chadi, D.J.2
-
24
-
-
0034895790
-
Optical properties of semiconductors using projector-augmented waves
-
Adolph, B., Furthmuller, J. & Bechstedt, F. Optical properties of semiconductors using projector-augmented waves. Phys. Rev. B 63, 125108 (2001)
-
(2001)
Phys. Rev B
, vol.63
, pp. 125108
-
-
Adolph, B.1
Furthmuller, J.2
Bechstedt, F.3
-
25
-
-
34347370671
-
Bonding of H in O vacancies of ZnO: Density functional calculations
-
Takenaka, H. & Singh, D. J. Bonding of H in O vacancies of ZnO: Density functional calculations. Phys. Rev. B 75, 241102(R) (2007)
-
(2007)
Phys. Rev. B
, vol.75
, pp. 241102
-
-
Takenaka, H.1
Singh, D.J.2
-
26
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
Kresse, G. & Furthmuller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996)
-
(1996)
Comput. Mater. Sci
, vol.6
, pp. 15-50
-
-
Kresse, G.1
Furthmuller, J.2
-
27
-
-
25744460922
-
Projector augmented-wave method
-
Blochl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994)
-
(1994)
Phys. Rev B
, vol.50
, pp. 17953-17979
-
-
Blochl, P.E.1
-
28
-
-
0011236321
-
From ultrasoft pseudopotentials to the projector augmented-wave method
-
Kresse, G. & Joubert, J. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758-1775 (1999)
-
(1999)
Phys. Rev B
, vol.59
, pp. 1758-1775
-
-
Kresse, G.1
Joubert, J.2
-
29
-
-
0037799714
-
Hybrid functionals based on a screened Coulomb potential
-
Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207-8215 (2003)
-
(2003)
J. Chem. Phys
, vol.118
, pp. 8207-8215
-
-
Heyd, J.1
Scuseria, G.E.2
Ernzerhof, M.3
-
30
-
-
45249100389
-
Defect energetics in ZnO: A hybrid Hartree-Fock density functional study
-
Oba, F., Togo, A., Tanaka, I., Paier, J. & Kresse, G. Defect energetics in ZnO: A hybrid Hartree-Fock density functional study. Phys. Rev. B 77, 245202 (2008)
-
(2008)
Phys. Rev B
, vol.77
, pp. 245202
-
-
Oba, F.1
Togo, A.2
Tanaka, I.3
Paier, J.4
Kresse, G.5
-
31
-
-
73449119560
-
Why nitrogen cannot lead to p-type conductivity in ZnO
-
Lyons, J. L., Janotti, A. & Van de Walle, C. G. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett. 95, 252105 (2009)
-
(2009)
Appl. Phys. Lett
, vol.95
, pp. 252105
-
-
Lyons, J.L.1
Janotti, A.2
Van De Walle, C.G.3
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