Bivariate-continuous-tunable interface memristor based on Bi2S3 nested nano-networks

Nano Research

Volumn 7, Issue 7, 2014, Pages 953-962

  Tian, Ye ^a,b   Guo, Chuangfei ^c   Guo, Shengming ^a   Yu, Taifung ^e   Liu, Qian ^a,d  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^b HUNAN CITY UNIVERSITY   (China)

^c BOSTON COLLEGE   (United States)

^d NANKAI UNIVERSITY   (China)

^e UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

interface memristor; nanostructure; resistive switching; synaptic electronics

Indexed keywords

EID: 84904539632     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0456-5     Document Type: Article

References (40)

1. DARPA/DSO BAA08-28. Systems of Neuromorphic Adaptive Plastic Scalable Electronics (SyNAPSE). http://www. darpa. mil/dso/solicitations/BAA08-28. pdf (accessed Nov. 2rd, 2008).
2. Nicholls, J. G.; Martin, A. R.; Wallace, B. G.; Fuchs, P. A., From neuron to brain; Sinauer Associates Sunderland: MA, 2001.
3. Dieck, S. T.; Brandstatter, J. H. Ribbon synapses of the retina. Cell Tissue Res. 2006, 326, 339-346.
4. Martin, S. J.; Grimwood, P. D.; Morris, R. G. M. Synaptic plasticity and memory: An evaluation of the hypothesis. Annu. Rev. Neurosci. 2000, 23, 649-711.
5. Song, S.; Miller, K. D.; Abbott, L. F. Competitive Hebbian learning through spike-timing-dependent synaptic plasticity. Nat. Neurosci. 2000, 3, 919-926.
6. Tang, Y.; Nyengaard, J. R.; De Groot, D. M. G.; Gundersen, H. J. G. Total regional and global number of synapses in the human brain neocortex. Synapse2001, 41, 258-273.
7. Joshi, J.; Parker, A. C.; Hsu, C. C. A carbon nanotube cortical neuron with spike-timing-dependent plasticity. Conf. Proc. IEEE Eng. Med. Biol. Soc. 2009, 1651-1654.
8. Jo, S. H.; Chang, T.; Ebong, I.; Bhadviya, B. B.; Mazumder, P.; Lu, W. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 2010, 10, 297-1301.
9. Alibart, F.; Pleutin, S.; Guerin, D.; Novembre, C.; Lenfant, S.; Lmimouni, K.; Gamrat, C.; Vuillaume, D. An organic nanoparticle transistor gehaving as a biological spiking synapse. Adv. Funct. Mater. 2010, 20, 330-337.
10. Martinez, J. J.; Toledo, J.; Garrigos, J.; Ferrandez, J.; Fernandez-Jover, E. Model and hardware emulation of the first synapse of the retina using discrete-time cellular neural networks. 16th IEEE International Conference on Image Processing, 2009, 2677-2680.
11. Strukov, D. B.; Snider, G. S.; Stewart, D. R.; Williams, R. S. The missing memristor found. Nature2008, 453, 80-83.
12. Chua, L. Memristor: The missing circuit element. IEEE Trans. Circuit Theory1971, 18, 507-519.
13. 2 resistive switching memory. Nat. Nanotechnol. 2010, 5, 148-153.
14. Yang, J. J.; Pickett, M. D.; Li, X. M.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 2008, 3, 429-433.
15. Kuzum, D.; Jeyasingh, R. G. D.; Lee, B.; Wong, H. S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 2012, 12, 2179-2186.
16. Seo, K.; Kim, I.; Jung, S.; Jo, M.; Park, S.; Park, J.; Shin, J.; Biju, K. P.; Kong, J.; Lee, K. et al. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. Nanotechnology2011, 22, 254023.
17. Ohno, T.; Hasegawa, T.; Tsuruoka, T.; Terabe, K.; Gimzewski, J. K.; Aono, M. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat. Mater. 2011, 10, 591-595.
18. Wang, Z. Q.; Xu, H. Y.; Li, X. H.; Yu, H.; Liu, Y. C.; Zhu, X. J. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv. Funct. Mater. 2012, 22, 2759-2764.
19. Ziegler, M.; Soni, R.; Patelczyk, T.; Ignatov, M.; Bartsch, T.; Meuffels, P.; Kohlstedt, H. An electronic version of Pavlov's dog. Adv. Funct. Mater. 2012, 22, 2744-2749.
20. Chanthbouala, A.; Garcia, V.; Cherifi, R. O.; Bouzehouane, K.; Fusil, S.; Moya, X.; Xavier, S.; Yamada, H.; Deranlot, C.; Mathur, N. D. et al. A ferroelectric memristor. Nat. Mater. 2012, 11, 860-864.
21. Jeong, D. S.; Thomas, R.; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, C. S. Emerging memories: Resistive switching mechanisms and current status. Rep. Prog. Phys. 2012, 75, 076502.
22. 3 interfaces. Phys. Rev. Lett. 2009, 102, 106803.
23. 3 Schottky junction for multi-bit nonvolatile memory application. Int. El. Devices Meet. 2005, 758-761.
24. Li, Y. T.; Long, S. B.; Liu, Q.; Lu, H. B.; Liu, S.; Liu, M. An overview of resistive random access memory devices. Chinese Sci. Bull. 2011, 56, 3072-3078.
25. Soci, C.; Zhang, A.; Xiang, B.; Dayeh, S.; Aplin, D.; Park, J.; Bao, X.; Lo, Y.; Wang, D. ZnO nanowire UV photodetectors with high internal gain. Nano Lett. 2007, 7, 1003-1009.
26. Guo, C. F.; Cao, S.; Zhang, J.; Tang, H.; Guo, S.; Tian, Y.; Liu, Q. Topotactic transformations of superstructures: From thin films to two-dimensional networks to nested two-dimensional networks. J. Am. Chem. Soc. 2011, 133, 8211-8215.
27. 3 thin films deposited by modified chemical bath deposition. Indian J. Eng. Mater. S. 2006, 13, 140-144.
28. 3 thin film and some semi-conducting properties of bismuth chalcogenides. J. Electrochem. Soc. 1982, 129, 332-335.
29. Goutman, J. D.; Glowatzki, E. Time course and calcium dependence of transmitter release at a single ribbon synapse. P. Natl. Acad. Sci. USA2007, 104, 16341-16346.
30. Magasinski, A.; Dixon, P.; Hertzberg, B.; Kvit, A.; Ayala, J.; Yushin, G. High-performance lithium-ion anodes using a hierarchical bottom-up approach. Nat. Mater. 2010, 9, 353-358.
31. Zhang, L. L.; Zhao, X. S. Carbon-based materials as supercapacitor electrodes. Chem. Soc. Rev. 2009, 38, 2520-2531.
32. Waser, R.; Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 2007, 6, 833-840.
33. Kuzum, D.; Yu, S.; Wong, H. S. P. Synaptic electronics: Materials, devices and applications. Nanotechnology2013, 24, 382001.
34. 3 nanowire network film and its optical switches. Nanotechnology2008, 19, 335302.
35. Valov, I.; Waser, R.; Jameson, J. R.; Kozicki, M. N. Electrochemical metallization memories-fundamentals, applications, prospects. Nanotechnology2011, 22, 254003.
36. 3 thin film with point-contacted Ag electrodes. Appl. Phys. Lett. 2007, 91, 223504.
37. + implanted. Appl. Phys. Lett. 2008, 92, 012117.
38. 2/Pt structure. Nanotechnology2011, 22, 254010.
39. Sze, S. M.; Ng, K. K. Physics of Semiconductor Devices; Wiley-Interscience, 2006.
40. 3 resistive switching memories. Small2012, 8, 1279-1284.