Air-stable electron depletion of Bi2Se3 using molybdenum trioxide into the topological regime

ACS Nano

Volumn 8, Issue 6, 2014, Pages 6400-6406

  Edmonds, Mark T ^a   Hellerstedt, Jack T ^a,b   Tadich, Anton ^c   Schenk, Alex ^d   O'Donnell, Kane Michael ^c   Tosado, Jacob ^a,b   Butch, Nicholas P ^b,e   Syers, Paul ^b   Paglione, Johnpierre ^b   Fuhrer, Michael S ^a,b  

^a MONASH UNIVERSITY   (Australia)

^b UNIVERSITY OF MARYLAND   (United States)

^c AUSTRALIAN SYNCHROTRON   (Australia)

^d LA TROBE UNIVERSITY   (Australia)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

air stable capping layer; molecular doping; topological insulator

Indexed keywords

ELECTRIC INSULATORS; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DOPING; TOPOLOGY;

CAPPING LAYER; ELECTRON DEPLETION; HIGH RESOLUTION; MOLECULAR DOPING; MOLYBDENUM TRIOXIDE; PASSIVATION LAYER; TOPOLOGICAL INSULATORS; TRANSPORT MEASUREMENTS;

MOLYBDENUM OXIDE;

EID: 84903440463     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn502031k     Document Type: Article

References (32)

1. Hasan, M. Z.; Kane, C. L. Colloquium: Topological Insulators Rev. Mod. Phys. 2010, 82, 3045-3067
2. 3 with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 438-442
3. Fu, L.; Kane, C. L.; Mele, E. J. Topological Insulators in Three Dimensions Phys. Rev. Lett. 2007, 98, 106803
4. Xia, Y.; Qian, D.; Hsieh, D.; Wray, L.; Pal, A.; Lin, H.; Bansil, A.; Grauer, D.; Hos, Y. S.; Cava, R. J. et al. Observation of a Large-Gap Topological-Insulator Class with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 398-402
5. 3 ACS Nano 2011, 5, 4698-4703
6. Hsieh, D.; Xia, Y.; Qian, D.; Wray, L.; Dil, J. H.; Meier, F.; Osterwalder, J.; Patthey, L.; Checkelsky, J. G.; Ong, N. P. et al. A Tunable Topological Insulator in the Spin Helical Dirac Transport Regime Nature 2009, 460, 1101-1106
7. 3 for Topological Insulator and Low-Temperature Thermoelectric Applications Phys. Rev. B 2009, 79, 195208
8. 3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study Appl. Phys. Lett. 2010, 97, 194102
9. 3 Topological Insulator Nanoribbons Nat. Commun. 2012, 3, 757-763
10. 3 Phys. Rev. Lett. 2010, 105, 176602
11. 3 with Highly Tunable Chemical Potential Nano Lett. 2010, 10, 2245-2250
12. Strobel, P.; Riedel, M.; Ristein, J.; Ley, L. Surface Transfer Doping of Diamond Nature 2004, 430, 439-441 (Pubitemid 38987901)
13. Greiner, M. T.; Helander, M. G.; Tang, W.-M.; Wang, Z.-B.; Qui, J.; Lu, Z.-H. Universal Energy-Level Alignment of Molecules on Metal Oxides Nat. Mater. 2012, 11, 76-81
14. 48 Appl. Phys. Lett. 2013, 102, 241601
15. 48-Doped Zinc-Tetraphenylporphyrin Films Org. Electron. 2013, 14, 169-174
16. 3 Nat. Phys. 2012, 8, 460-463
17. 3 in the Topological Regime Phys. Rev. Lett. 2012, 109, 166801
18. 3 Nat. Commun. 2013, 4, 2040-2044
19. Kroger, M.; Hamwi, S.; Meyer, J.; Riedl, T.; Kowalsky, W.; Kahn, A. p-Type Doping of Organic Wide Band Gap Materials by Transition Metal Oxides: A Case-Study on Molybdenum Trioxide Org. Electron. 2009, 10, 932-938
20. Coletti, C.; Riedl, C.; Lee, D. S.; Krauss, B.; Patthey, L.; von Klitzing, K.; Smet, J. H.; Starke, U. Charge Neutrality and Band-Gap Tuning of Epitaxial Graphene on SiC by Molecular Doping Phys. Rev. B 2010, 81, 235401
21. 48: Energy Level Scheme and Doping Efficiency J. Chem. Phys. 2012, 136, 124701-124709
22. 3 Sheets Nanoscale 2010, 2, 429-433
23. 3 Phys. Rev. Lett. 2011, 107, 186405
24. 3 Phys. Rev. Lett. 2010, 105, 76802
25. Ley, L.; Smets, Y.; Pakes, C. I.; Ristein, J. Calculating the Universal Energy-Level Alignment of Organic Molecules on Metal Oxides Adv. Funct. Mater. 2013, 23, 794-805
26. Analytis, J. G.; McDonald, R. D.; Riggs, S. C.; Chu, J.-H.; Boebinger, G. S.; Fisher, I. R. Two-Dimensional Surface State in the Quantum Limit of a Topological Insulator Nat. Phys. 2010, 6, 960-964
27. Xie, L.; Wang, X.; Mao, H.; Wang, R.; Ding, M.; Wang, Y.; ózyilmaz, B.; Loh, K. P.; Wee, A. T. S.; Ariando et al. Electrical Measurement of Non-destructively p-Type Doped Graphene Using Molybdenum Trioxide Appl. Phys. Lett. 2011, 99, 12112
28. 3 Topological Insulator Crystals Phys. Rev. B 2010, 81, 241301(R)
29. 2 Using Core-Level Photoelectron Spectroscopy and Scanning Tunneling Microscopy Phys. Rev. B 2013, 88, 245308
30. 3 Proc. SPIE 2013, 8923, 89230-89236
31. 3. Preprint available at http://arxiv.org/abs/1405.5692.
32. 3 Film on Si(111) with Atomically Sharp Interface Thin Solid Films 2011, 520, 224-229