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Volumn 109, Issue 16, 2012, Pages

Intrinsic electron-phonon resistivity of Bi 2Se 3 in the topological regime

(7) Kim, Dohun a Li, Qiuzi b Syers, Paul a Butch, Nicholas P a,c Paglione, Johnpierre a Sarma, S Das a,b Fuhrer, Michael S a

a UNIVERSITY OF MARYLAND (United States)

b University of Maryland (United States)

c LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CARRIER; BULK CONDUCTION; DEFORMATION POTENTIAL; DIRAC POINT; DISORDER EFFECT; ELECTRON PHONON; FERMI VELOCITIES; INTRINSIC LIMIT; QUANTITATIVE COMPARISON; ROOM TEMPERATURE; SURFACE CONDUCTION; TEMPERATURE DEPENDENT; THERMAL ACTIVATION; TRANSPORT CALCULATION;

CARRIER CONCENTRATION; PHONON SCATTERING; SURFACE STATES; TOPOLOGY;

PHONONS;

EID: 84867511232 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.109.166801 Document Type: Article

Times cited : (95)

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