Rapid surface oxidation as a source of surface degradation factor for Bi2Se3

ACS Nano

Volumn 5, Issue 6, 2011, Pages 4698-4703

  Kong, Desheng ^a   Cha, Judy J ^a   Lai, Keji ^b   Peng, Hailin ^a,d   Analytis, James G ^b,c   Meister, Stefan ^a   Chen, Yulin ^b,c   Zhang, Hai Jun ^b   Fisher, Ian R ^b,c   Shen, Zhi Xun ^b,c   Cui, Yi ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d PEKING UNIVERSITY   (China)

Author keywords

bismuth selenide; doping; nanoribbon; oxidation; topological insulator; transport

Indexed keywords

AMBIENT CONDITIONS; BISMUTH SELENIDE; BULK SINGLE CRYSTALS; DOPING PROCESS; METALLIC SURFACE; N-TYPE DOPING; NANORIBBONS; NATIVE OXIDES; RELATIVE CONTRIBUTION; SURFACE COMPOSITIONS; SURFACE DEGRADATION; SURFACE OXIDATIONS; SURFACE PASSIVATION; TOPOLOGICAL INSULATOR; TRANSPORT; TRANSPORT MEASUREMENTS;

BISMUTH; DEGRADATION; DIFFRACTIVE OPTICS; ELECTRIC INSULATORS; EXPERIMENTS; OXIDATION; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SELENIUM; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; TOPOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACES;

EID: 79959786249     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200556h     Document Type: Article

References (38)

1. Moore, J. E. The Birth of Topological Insulators Nature 2010, 464, 194-198
2. Hasan, M. Z.; Kane, C. L. Colloquium: Topological Insulators Rev. Mod. Phys. 2010, 82, 3045
3. Qi, X.-L.; Zhang, S.-C. Topological Insulators and Superconductors. Preprint avaible at http://arxiv.org/abs/1008.2026.
4. Fu, L.; Kane, C. L. Topological Insulators with Inversion Symmetry Phys. Rev. B 2007, 76, 045302
5. x Phys. Rev. B 2009, 80, 085307
6. 3 with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 438-442
7. Xia, Y.; Qian, D.; Hsieh, D.; Wray, L.; Pal, A.; Lin, H.; Bansil, A.; Grauer, D.; Hor, Y. S.; Cava, R. J. et al. Observation of a Large-Gap Topological-Insulator Class with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 398-402
8. 2 Ternary Chalcogenides EPL 2010, 90, 37002
9. 2 Class of Topological Semiconductors Phys. Rev. Lett. 2010, 105, 036404
10. Chadov, S.; Qi, X.; Kübler, J.; Fecher, G. H.; Felser, C.; Zhang, S. C. Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds Nat. Mater. 2010, 9, 541-545
11. Lin, H.; Wray, L. A.; Xia, Y.; Xu, S.; Jia, S.; Cava, R. J.; Bansil, A.; Hasan, M. Z. Half-Heusler Ternary Compounds as New Multifunctional Experimental Platforms for Topological Quantum Phenomena Nat. Mater. 2010, 9, 546-549
12. Xu, S.-Y.; Wray, L. A.; Xia, Y.; Shankar, R.; Petersen, A.; Fedorov, A.; Lin, H.; Bansil, A.; Hor, Y. S.; Grauer, D.; et al. Discovery of Several Large Families of Topological Insulator Classes with Backscattering-Suppressed Spin-Polarized Single-Dirac-Cone on the Surface. Preprint avaible at http://arxiv.org/abs/1007.5111.
13. Hsieh, D.; Xia, Y.; Qian, D.; Wray, L.; Dil, J. H.; Meier, F.; Osterwalder, J.; Patthey, L.; Checkelsky, J. G.; Ong, N. P. et al. A Tunable Topological Insulator in the Spin Helical Dirac Transport Regime Nature 2009, 460, 1101-1105
14. 3 to the Two-Dimensional Limit Nat. Phys. 2010, 6, 584-588
15. Wray, L. A.; Xu, S.-Y.; Xia, Y.; Hor, Y. S.; Qian, D.; Fedorov, A. V.; Lin, H.; Bansil, A.; Cava, R. J.; Hasan, M. Z. Observation of Topological Order in a Superconducting Doped Topological Insulator Nat. Phys. 2010, 6, 855-859
16. Chen, Y. L.; Chu, J.-H.; Analytis, J. G.; Liu, Z. K.; Igarashi, K.; Kuo, H.-H.; Qi, X. L.; Mo, S. K.; Moore, R. G.; Lu, D. H. et al. Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator Science 2010, 329, 659-662
17. Peng, H.; Lai, K.; Kong, D.; Meister, S.; Chen, Y.; Qi, X.-L.; Zhang, S.-C.; Shen, Z.-X.; Cui, Y. Aharonov-Bohm Interference in Topological Insulator Nanoribbons Nat. Mater. 2010, 9, 225-229
18. Analytis, J. G.; McDonald, R. D.; Riggs, S. C.; Chu, J.-H.; Boebinger, G. S.; Fisher, I. R. Two-Dimensional Surface State in the Quantum Limit of a Topological Insulator Nat. Phys. 2010, 6, 960-964
19. Sacepe, B.; Oostinga, J. B.; Li, J.; Ubaldini, A.; Couto, N. J. G.; Giannini, E.; Morpurgo, A. F. Gate-Tuned Normal and Superconducting Transport at the Surface of a Topological Insulator. Preprint avaible at http://arxiv.org/abs/1101.2352.
20. 3: A Comparison of Photoemission and Shubnikov-De Haas Measurements Phys. Rev. B 2010, 81, 205407
21. Kong, D.; Randel, J. C.; Peng, H.; Cha, J. J.; Meister, S.; Lai, K.; Chen, Y.; Shen, Z.-X.; Manoharan, H. C.; Cui, Y. Topological Insulator Nanowires and Nanoribbons Nano Lett. 2010, 10, 329-333
22. 3 Nanoribbons Nano Lett. 2010, 10, 1076-1081
23. 3 Topological Insulator Crystals Phys. Rev. B 2010, 81, 241301(R)
24. 3 Due to the Three-Dimensional Bulk Fermi Surface Phys. Rev. B 2010, 81, 195309
25. 3 from Shubnikov-de Haas Investigations Phys. Status Solidi B 1973, 58, 91-100
26. 3 Mixed Crystals by Shubnikov-de Haas and Cyclotron Resonance Measurements in High Magnetic Fields Phys. Rev. B 1999, 59, 15733
27. Dharmadhikari, V. S.; Sainkar, S. R.; Badrinarayan, S.; Goswami, A. Characterisation of Thin Films of Bismuth Oxide by X-Ray Photoelectron Spectroscopy J. Electron Spectrosc. Relat. Phenom. 1982, 25, 181-189
28. Wang, D.; Chang, Y.-L.; Wang, Q.; Cao, J.; Farmer, D. B.; Gordon, R. G.; Dai, H. Surface Chemistry and Electrical Properties of Germanium Nanowires J. Am. Chem. Soc. 2004, 126, 11602-11611 (Pubitemid 39244977)
29. Garcia, M. A.; Wolter, S. D.; Kim, T. H.; Choi, S.; Baier, J.; Brown, A.; Losurdo, M.; Bruno, G. Surface Oxide Relationships to Band Bending in GaN Appl. Phys. Lett. 2006, 88, 013506
30. Goetzberger, A.; Heine, V.; Nicollian, E. H. Surface States in Silicon from Charges in the Oxide Coating Appl. Phys. Lett. 1968, 12, 95-97
31. Al-Abadleh, H. A.; Grassian, V. H. Oxide Surfaces as Environmental Interfaces Surf. Sci. Rep. 2003, 52, 63-161
32. Minato, T.; Sainoo, Y.; Kim, Y.; Kato, H. S.; Aika, K.-i.; Kawai, M.; Zhao, J.; Petek, H.; Huang, T.; He, W. et al. The Electronic Structure of Oxygen Atom Vacancy and Hydroxyl Impurity Defects on Titanium Dioxide (110) Surface J. Chem. Phys. 2009, 130, 124502
33. 3 Studied by X-Ray Photoelectron Spectroscopy J. Phys.: Condens. Matter 2000, 12, 5607-5616
34. 3 Science 2009, 325, 178-181
35. 2, InSe and GaSe Surf. Sci. 1992, 269/270, 909-914 (Pubitemid 23561508)
36. Das Sarma, S.; Stern, F. Single-Particle Relaxation Time Versus Scattering Time in an Impure Electron Gas Phys. Rev. B 1985, 32, 8442-8444
37. 3 with Highly Tunable Chemical Potential Nano Lett. 2010, 10, 2245-2250
38. Allen, J. E.; Hemesath, E. R.; Perea, D. E.; Lensch-Falk, J. L.; Li, Z. Y.; Yin, F.; Gass, M. H.; Wang, P.; Bleloch, A. L.; Palmer, R. E. et al. High-Resolution Detection of Au Catalyst Atoms in Si Nanowires Nat. Nanotechnol. 2008, 3, 168-173 (Pubitemid 351355141)