Surface conduction of topological Dirac electrons in bulk insulating Bi 2 Se 3

Nature Physics

Volumn 8, Issue 6, 2012, Pages 459-463

  Kim, Dohun ^a   Cho, Sungjae ^a,c   Butch, Nicholas P ^a,c   Syers, Paul ^a   Kirshenbaum, Kevin ^a   Adam, Shaffique ^b   Paglione, Johnpierre ^a   Fuhrer, Michael S ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL IMPURITIES; REFRACTORY METAL COMPOUNDS; SURFACE STATES;

CHARGED IMPURITY; DISORDER STRENGTH; ELECTRONIC TRANSPORT; HALL RESISTIVITY; INHOMOGENEOUS MINIMUMS; MINIMUM CONDUCTIVITIES; SURFACE CONDUCTION; TRANSPORT EXPERIMENTS;

TOPOLOGY;

EID: 84861669610     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys2286     Document Type: Article

References (30)

1. Fu, L., Kane, C. L. & Mele, E. J. Topological insulators in three dimensions. Phys. Rev. Lett. 98, 106803 (2007).
2. Zhang, H. J. et al. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nature Phys. 5, 438-442 (2009).
3. Hsieh, D. et al. A tunable topological insulator in the spin helical Dirac transport regime. Nature 460, 1101-1105 (2009).
4. Chen, Y. L. et al. Experimental realization of a three-dimensional topological insulator Bi2Te3. Science 325, 178-181 (2009).
5. Xia, Y. et al. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nature Phys. 5, 398-402 (2009).
6. Zhang, T. et al. Experimental demonstration of topological surface states protected by time-reversal symmetry. Phys. Rev. Lett. 103, 266803 (2009).
7. Alpichshev, Z. et al. STM imaging of electronic waves on the surface of Bi2Te3: Topologically protected surface states and hexagonal warping effects. Phys. Rev. Lett. 104, 016401 (2010).
8. Hanaguri, T. et al. Momentum-resolved Landau-level spectroscopy of Dirac surface state in Bi2Se3. Phys. Rev. B 82, 081305R (2010).
9. Cheng, P. et al. Landau quantization of topological surface states in Bi2Se3. Phys. Rev. Lett. 105, 076801 (2010).
10. Beidenkopf, H. et al. Spatial fluctuations of helical Dirac fermions on the surface of topological insulators. Nature Phys. 7, 939-943 (2011).
11. Steinberg, H., Gardner, D. R., Lee, Y. S. & Jarillo-Herrero, P. Surface state transport and ambipolar electric field effect in Bi2Se3 nanodevices. Nano Lett. 10, 5032-5036 (2010).
12. Qu, D., Hor, Y. S., Xiong, J., Cava, R. J. & Ong, N. P. Quantum oscillations and Hall anomaly of surface states in the topological insulator Bi2Te3. Science 329, 821-824 (2010).
13. Xiu, F. et al. Manipulating surface states in topological insulator nanoribbons. Nature Nanotech. 6, 216-221 (2011).
14. Analytis, J. G. et al. Two-dimensional surface state in the quantum limit of a topological insulator. Nature Phys. 6, 960-964 (2010).
15. Peng, H. et al. Aharonov-Bohm interference in topological insulator nanoribbons. Nature Mater. 9, 225-229 (2010).
16. Chen, J. et al. Gate-voltage control of chemical potential and weak antilocalization in Bi2Se3. Phys. Rev. Lett. 105, 176602 (2010).
17. Checkelsky, J. G., Hor, Y. S., Cava, R. J. & Ong, N. P. Surface state conduction observed in voltage-tuned crystals of the topological insulator Bi2Se3. Phys. Rev. Lett. 106, 196801 (2010).
18. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005). (Pubitemid 41599867)
19. Hwang, E. H., Adam, S. & Das Sarma, S. Carrier transport in two-dimensional graphene layers. Phys. Rev. Lett. 98, 186806 (2007).
20. Adam, S., Hwang, E. H., Galitski, V. M. & Das Sarma, S. A self-consistent theory for graphene transport. Proc. Natl Acad. Sci. USA 104, 18392-18397 (2007). (Pubitemid 350210707)
21. Culcer, D., Hwang, E. H., Stanescu, T. D. & Das Sarma, S. Two-dimensional surface charge transport in topological insulators. Phys. Rev. B 82, 155457 (2010).
22. Butch, N. P. et al. Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals. Phys. Rev. B 81, 241301 (2010).
23. Kong, D. et al. Rapid surface oxidation as a source of surface degradation factor for Bi2Se3. ACS Nano 5, 4698-4703 (2011).
24. Das, A. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nature Nanotech. 3, 210-215 (2008). (Pubitemid 351499403)
25. Efetov, D. K. & Kim, P. Controlling electron-phonon interactions in graphene at ultrahigh carrier densities. Phys. Rev. Lett. 105, 256805 (2010).
26. Lu, C. G., Fu, Q., Huang, S. M. & Liu, J. Polymer electrolyte-gated nanotube field-effect carbon transistor. Nano Lett. 4, 623-627 (2004). (Pubitemid 38586625)
27. Coletti, C. et al. Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping. Phys. Rev. B 81, 235401 (2010).
28. Bansal, M., Kim, Y. S., Brahlek, M., Eliav, E. & Oh, S. Thickness-independent surface transport channel in topological insulator Bi2Se3 thin films. Preprint at http://arxiv.org/abs/1104.5709 (2011).
29. Chen, J. H. et al. Charged impurity scattering in graphene. Nature Phys. 4, 377-381 (2008).
30. Adam, S., Hwang, E. H. & Sarma, S. D. 2D transport and screening in topological insulator surface states. Preprint at http://arxiv.org/abs/ 1201.4433 (2012).