In situ monitoring of resistivity and carrier concentration during molecular beam epitaxy of topological insulator Bi2Se3

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8923, Issue , 2013, Pages

  Hellerstedt, Jack ^a,b   Chen, J H ^b   Kim, Dohun ^b   Cullen, William G ^b   Zheng, C X ^a   Fuhrer, Michael S ^a,b  

^a MONASH UNIVERSITY   (Australia)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

Bi2Se3; MBE; Topological Insulator; transport

Indexed keywords

EID: 84893942424     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2033659     Document Type: Conference Paper

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