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Volumn 102, Issue 24, 2013, Pages

Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

(10) Tadich, A a,b Edmonds, M T b Ley, L b,c Fromm, F c,d Smets, Y b Mazej, Z e Riley, J b Pakes, C I b Seyller, Th d Wanke, M d

a AUSTRALIAN SYNCHROTRON (Australia)

b LA TROBE UNIVERSITY (Australia)

c UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

d CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

e JO EF STEFAN INSTITUTE (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED PHOTOEMISSION; ELECTRON-DOPING; EPITAXIAL GRAPHENE; FERMI-DIRAC STATISTICS; FLUORINATED FULLERENES; HIGHLY-CORRELATED; MOLECULAR DOPING; P-TYPE DOPING;

EPITAXIAL GROWTH; MOLECULAR ORBITALS; SILICON CARBIDE;

GRAPHENE;

EID: 84879830950 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4811248 Document Type: Article

Times cited : (31)

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