SCOPUS 정보 검색 플랫폼

Journal of Chemical Physics

Volumn 139, Issue 20, 2013, Pages

Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method

(6) Yoon, T L a Lim, T L b Min, T K a Hung, S H c Jakse, N d Lai, S K c

a SCHOOL OF PHYSICS (Malaysia)

b MULTIMEDIA UNIVERSITY (Malaysia)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

d GRENOBLE INSTITUTE OF TECHNOLOGY (France)

Author keywords

[No Author keywords available]

Indexed keywords

6H-SILICON CARBIDES; ANNEALING TEMPERATURES; EMPIRICAL POTENTIALS; PAIR CORRELATION FUNCTIONS; SEPARATION PARAMETERS; SIMULATED ANNEALING METHOD; SUBSTRATE SURFACE; TERSOFF POTENTIAL;

BINDING ENERGY; BOND LENGTH; EPITAXIAL GROWTH; SILICON CARBIDE; SIMULATED ANNEALING;

GRAPHENE;

EID: 84903364061 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.4832043 Document Type: Article

Times cited : (19)

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