Growth of graphene on 6H-SiC by molecular dynamics simulation

Condensed Matter Physics

Volumn 14, Issue 4, 2011, Pages

  Jakse, N ^a   Arifin, R ^b   Lai, S K ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Epitaxial growth; Graphene; Molecular dynamics

Indexed keywords

EID: 83755186671     PISSN: 1607324X     EISSN: 22249079     Source Type: Journal    
DOI: 10.5488/CMP.14.43802     Document Type: Article

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12. At this temperature only part of the area covers with grown graphene. If we consider T = 1850 K, grown graphene covers the whole area (not shown) with an average C-C bond-length of 1.48 Å. This annealing temperature differs, however, from ours using TEA potential and is certainly much higher than the experimentally observed value.