Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Hwang, Yubin ^a   Lee, Eung Kwan ^a   Choi, Heechae ^a   Yun, Kyung Han ^a   Lee, Minho ^a   Chung, Yong Chae ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC SCALE; BRIDGE SITES; CARBON ATOMS; CLUSTER FORMATIONS; CRITICAL TEMPERATURES; DIFFUSION ENERGY BARRIERS; EPITAXIAL GRAPHENE; GRAPHENE SHEETS; HIGH QUALITY; MASS PRODUCTION; MOLECULAR DYNAMICS SIMULATIONS; SILICON ATOMS; STRUCTURAL STABILITIES;

ATOMS; GRAPHENE; HETEROJUNCTIONS; MOLECULAR DYNAMICS; SILICON; SILICON CARBIDE; STABILITY;

EPITAXIAL GROWTH;

EID: 84862131530     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4722994     Document Type: Conference Paper

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