Model and simulations of the epitaxial growth of graphene on non-planar 6H-SiC surfaces

Journal of Physics D: Applied Physics

Volumn 45, Issue 15, 2012, Pages

  Ming, Fan ^a   Zangwill, Andrew ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; EFFECTIVE ENERGY; EPITAXIAL GRAPHENE; FRACTURE ANGLE; GAUSSIANS; GRAPHENE GROWTH; GROWTH MORPHOLOGY; KINETIC MONTE CARLO MODEL; KINETIC PROCESS; MODEL AND SIMULATION; MODEL PARAMETERS; POWER LAW; STEP-FLOW GROWTH; STRIP-WIDTHS; VICINAL SURFACE;

COMPUTER SIMULATION; ENERGY BARRIERS; EPITAXIAL GROWTH; SILICON CARBIDE;

GRAPHENE;

EID: 84859248562     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/15/154007     Document Type: Article

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